Discrete Devices
2008-6
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SANYO Discrete Devviicceess
SANYO's environmentally-considered discrete "ECoP"
contributes to the realization of comfortable life in
various aspects.
Contents
■ Devices for Mobile Equipment
■ Devices for SW Power Supply
■ Devices for Lighting
p2
p14
p28
p31
p31
p32
p33
■ Devices for Modem
■ Devices for Infrared Sensor
■ Devices for Satellite/GPS
■ FM Transmitter
Invisible
Friendly
Smart
Ultra-small
Thin-form
High-efficient
Energy-saving
Multi-function
High-performance
High-integration
Light-weight
We provide discrete solutions based on "LIGHT, FAST, EFFICIENT & FRIENDLY"
concept to contribute to the creation of "Symbiosis Next-generation Electronic Devices"
aiming at the realization of better life.
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Devices for Mobile Equipment
Application Block
Charger
■
■
[GSM]
Charger
DC-DC Converter / LoadPSW6
P3
CPU
Down Converter (Low end)
AC Adapter
System
IrDA
Control IC
Down Converter (High end)
Li-ion Battery
MIC
P11
P12
P11
Battery
P5
MOSFETs (Pch) + Schottky Barrier Diodes (or MOSFETs (Pch))
: Development
❈
M
Up Converter (Low end)
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
V
[V]
R
(on) [Ω]
F
V
/
I
I
O
[A]
/
D
DS
DSS
Type No.
Package
CPH5
2 in 1
V
P
D
[W]
GSS
[V]
V
=2.5V
GS
V
I
R
F
USB IF
[V]
[A]
typ
max
typ
max
Pch MOS
SBD
20
15
20
15
20
30
12
20
20
12
12
±10
-
2
1
0.9
-
0.140
-
0.200
-
-
-
-
CPH5802
VEC2822
VEC2818
1
-
0.35
0.4
Card IF
Flash
Up Converter (High end)
Pch MOS
SBD
±10
-
3.5
2
1
0.077
-
0.108
-
-
-
Q1+D1
-
2
-
0.5
0.56
VEC8
Pch MOS
SBD
±10
-
3.5
2
1
0.077
-
0.108
-
-
-
0.5
-
P10
-
2
-
0.45
VEC2303
VEC2301
ECH8654
ECH8611
ECH8652
Pch MOS
Pch MOS
Pch MOS
Pch MOS
Pch MOS
±8
±10
±10
±9
±10
4
0.9
0.9
1.3
1.3
1.3
0.054
0.087
0.041
0.045
0.031
0.075
0.120
0.058
0.065
0.045
-
-
-
-
-
VEC8
ECH8
3
-
-
CCD etc.
Q1+Q2
5
-
-
5
-
-
❈
6
-
-
LCD
[CDMA]
LCD-Backlight
P9
Q1
AC adapter
Input
Q2
5V to 6V/0.5A to 1A
Power
management IC
Li-ion
battery
Transistors (PNP) + MOSFETs (Pch)
: Development
❈
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
(sat) [V]
V
R
(on) [Ω]
CE
V
V
/
I
I
D
/
P
P
DS
CEO
C
C
D
Type No.
Package
2 in 1
V
=2.5V
GS
I
I
DSS
[V]
C
B
[A]
[W]
[A]
[mA]
typ
max
typ
max
PNP TR
Pch MOS
PNP TR
30
12
30
20
30
30
30
12
20
12
20
12
20
12
3
4
1.1
1.1
1.1
1.1
1.3
1.0
1.4
1.5
1.5
1.5
1.5
1.6
1.6
1.5
1.5
-
75
-
0.11
0.16
-
-
VEC2904
VEC2905
-
-
0.054
-
0.074
-
Q1+Q2
Q1
VEC8
3
1.5
-
75
-
0.11
0.16
Pch MOS
PNP TR
3
-
-
0.087
-
0.120
-
CPH6122
MCH6122
VEC1106
MCH6320
MCH6321
MCH6336
MCH6337
ECH8304
ECH8301
EMH1303
CPH6
MCPH6
VEC8
3
1.5
1.5
1.5
-
75
75
75
-
0.120
0.180
❈
❈
PNP TR
3
0.120
0.180
-
-
PNP TR
5
0.105
0.155
-
-
Pch MOS
Pch MOS
Pch MOS
Pch MOS
Pch MOS
Pch MOS
Pch MOS
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.047
0.072
0.047
0.053
0.018
0.026
0.027
0.066
0.098
0.066
0.075
0.026
0.037
0.036
4
-
-
MCPH6
5
-
-
Q2
4.5
9.5
8
-
-
-
-
ECH8
EMH8
-
-
7
-
-
2
3
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Devices for Mobile Equipment
Li-ion Battery
■
[CDMA]
P+
B+
CELL
B-
Control IC
P-
Battery Protection
Recommended Bipolar Transistors (PNP)
Recommended MOSFETs (Nch)
: Development
❈
V
I
V
CEO
[V]
C
DSS
[V]
MCPH3
MCPH6
CPH3
CPH6
VEC8
VEC8(2 in 1)
EMH8
ECH8
TSSOP8
SOP8
[A]
2.5
3.0
6.0
2.0
3.0
5.0
❈
❈
MCH3143
MCH3106
CPH3143
CPH3121
CPH3107
CPH3144
CPH3122
CPH3110
VEC1105
VEC1104
EMH2405
EMH2407
ECH8601R
ECH8649
FTD2011A
FTD2017R
FW231A
FW232A
-12
-15
CPH6121
CPH6122
20
30
ECH8651R
ECH8622R
MCH3144
MCH3109
EMH2402
FTD2019A
❈
-30
MCH6122
VEC2102
❈
VEC1106
Recommended MOSFETs for Machine Tools
Recommended Schottky Barrier Diodes (Single)
[Features]
V
DSS
[V]
Polarity
SMP
ZP
Drive
• Package size: 1.6×0.8mm and I =1A, Minimum in industry size !
O
• Thickness of Package: Typ. 0.60mm
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
2SK4163
TM1829Z
2SK4164
TM1831Z
2SK4044
2SJ683
30
45
60
1.8V Drive
V
I
O
R
ECSP1008-2
ECSP1608-4
[V]
[A]
SS0203EJ
SB0203EJ
SS0503EJ
SB0503EJ
SS1003EJ
SB1003EJ
0.2
2SK4066
2SK4065
SS0503EC
SB0503EC
4.0V Drive
30
0.5
1.0
75
80
2SK4165
2SJ686
2SK4045
2SJ684
100
Recommended Schottky Barrier Diodes (2 in 1: Parallel type)
[Features]
• Package size: 2.8×2.9mm and 30V/3A [SBS813/SBE813]
• Package size: 2.0×2.1mm and 30V/2A [SBS818], 15V/2A [SBS817]
• Thickness of Package: Typ. 0.75mm
: Development
❈
V
[V]
I
O
[A]
R
MCPH5
EMH8
CPH5
VEC8
SBS808M
SBE808
SBS804
1.0
15
SBS817
2.0
❈
SBE817
0.5
1.0
SBS806M
SBE805
SBE807
❈
SBS810
SBS814
SBS811
SBE811
SBS813
SBE813
SBS818
30
2.0
3.0
❈
SBE818
4
5
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Devices for Mobile Equipment
DC-DC Converter/Load SW
■
[Bipolar Transistor Use Example]
(1) DC-DC Converter
Recommended MOSFETs
R
(on)
Step up chopper
Step down chopper
DS
max [mΩ]
=4V
Back Converter
(Step Down)
V
Drive
[V]
DSS
[V]
V
V
V
V
IN
OUT
IN
OUT
Package
SCH6
Type No.
SBD
V
GS
(*: V =4.5V)
GS
SCH2809
SCH2810
SCH2811
MCH5815
MCH5818
MCH5802
MCH5805
CPH5812
CPH5815
CPH5818
CPH5802
CPH5835
CPH5822
VEC2811
VEC2817
290*
530
1.8
2.5
4.0
1.8
-12
-30
-12
15V/0.5A
15V/0.5A
830
290*
530
MCPH5
-30
-60
1090
2300
290*
290*
490*
145
4.0
30V/0.5A
50V/0.1A
15V/2A
Bipolar Transistors + Schottky Barrier Diodes
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
1.8
Internal
chip
equivalent connection
product
TR
SBD
TR
SBD
-12
15V/0.5A
15V/1A
Electrical
Type No.
Package
h
V
(sat) [V]
typ
V
[V]
I
R
[
μ
A]
t
rr
[ns]
4.0
1.8
2.5
4.0
4.0
2.5
FE
CE
F
CPH5
V
I
P
V
I
O
[A]
CEO
[V]
C
C
RRM
[V]
V
I
I
I
B
I
V
I
CE
C
C
F
[A]
R
F
[A] [W]
min max
max
max
max
max
-20
[V] [A]
[A] [mA]
[V]
[A]
235
-30
-30
-12
290
30V/0.5A
30V/2A
15V/3A
CPH3115
B18
CPH5706
CPH5705
CPH5702
CPH5703
30 1.5 0.9 30 0.7
2
2
2
2
0.1 200 560 0.75 15 0.25 0.375 0.7 0.55 10 200 0.1 10
0.5 200 560 1.5 30 0.155 0.23 0.5 0.35 500 0.1 15
0.5 200 560 1.5 30 0.12 0.18 0.7 0.55 15 80 0.1 10
+SBS006
168
VEC8
62*
CPH3109
B18
30
30
50
3
3
3
0.9 15
1
6
+SBS004
R
(on)
DS
max [mΩ]
=4V
CPH5
Synchronous Back Converter
(Pch + Nch or Nch + Nch)
V
DSS
[V]
Drive
[V]
CPH3209
B22
Package
Type No.
SBD
0.9 30 0.7
0.9 50 0.5
V
+SB07-03C
GS
(*: V =4.5V)
GS
CPH3205
B22
0.1 200 560
1
50 0.08 0.12 0.5 0.55 25 50 0.1 10
+SB05-05CP
SCH1305
SCH1406
SCH2806
SCH2816
MCH3317
MCH3456
MCH5811
MCH5819
CPH3321
CPH3313
CPH3337
CPH5809
CPH5819
CPH5805
-12
20
310*
210
-
1.8
4.0
1.8
SCH6
Bipolar Transistors (PNP)
15V/0.5A
-
440
290*
160
210
520
98*
235
77
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
-12
15
h
V
CE
(sat) [V]
Complementary
product
FE
Type No.
Package
V
CEO
[V]
I
P
C
[W]
C
MCPH3/5
I
I
B
[mA]
C
[A]
min
max
typ
max
20
15V/1A
[A]
1.5
1.5
1
30
4.0
1.8
2.5
4.0
2.5
30V/0.5A
MCH3144
MCH3109
MCH3145
MCH3105
30
30
50
50
2
3
2
3
0.8 *1
0.8 *1
0.8 *1
0.8 *1
200
200
200
200
560
560
560
560
75
0.17
0.155
0.165
0.1
0.26
0.23
0.33
0.2
MCH3244
MCH3209
MCH3245
MCH3205
-12
-20
-30
30
30
-
MCPH3
50
CPH3/5
1
50
90
*1: When mounted on ceramic substrate (600mm2×0.8mm)
30
520
150
30V/0.5A
4.0
30
Bipolar Transistors (NPN)
R
(on)
DS
max [mΩ]
=4V
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
Boost Converter
(Step Up)
V
Drive
[V]
DSS
[V]
Package
SCH6
Type No.
SBD
h
V
CE
(sat) [V]
Complementary
product
FE
V
GS
Type No.
Package
V
CEO
[V]
I
P
C
[W]
C
I
I
B
[mA]
C
[A]
min
max
typ
max
[A]
1.5
1.5
1
SCH2817
SCH2806
SCH2819
SCH2808
MCH5826
MCH5811
MCH5809
MCh5819
CPH5803
CPH5811
CPH5831
CPH5809
CPH5819
CPH5805
VEC2813
VEC2816
15
20
160
210
215
560
160
210
215
520
210
63
1.8
15V/0.5A
30V/0.5A
MCH3244
30
30
50
50
2
3
2
3
0.8 *1
0.8 *1
0.8 *1
0.8 *1
200
250
200
250
560
400
560
400
75
0.16
0.08
0.13
0.06
0.24
0.12
0.26
0.09
MCH3144
2.5
4.0
MCH3221 *2
MCH3245
30
-
30
MCPH3
50
MCH3145
-
15
20
15V/0.5A
15V/1A
MCH3222 *2
1
50
1.8
*1: When mounted on ceramic substrate (600mm2×0.8mm) *2: MBIT III series (New Product)
MCPH5
2.5
4.0
30
30V/0.5A
15V/1A
15V/2A
20
1.8
B18
B22
63
CPH5
VEC8
Co
Ca
Co
Ca
90
2.5
4.0
30
520
150
66
30V/0.5A
30V/2A
20
30
1.8
4.0
99
B
E
A
B
E
A
6
7
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Devices for Mobile Equipment
LCD-Backlight
■
[Power MOSFET Use Example]
(2) Load SW
Recommended MOSFETs
Push-Pull
Half-Bridge
Full-Bridge
V
MCPH6
CPH6
VEC8
EMH8
Application Sample: Pch + Nch
DSS
20V
30V
MCH6628 CPH6605
-
EMH2603
N1
N2
P1
N1
P1
N1
P2
N2
MCH6614 CPH6615 VEC2612 EMH2602
Power MOSFETs (Pch + Nch)
: New products
●
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
(on) [Ω]
Power MOSFETs
R
Electrical
DS
Type No.
Package
Polarity
V
V
I
P
[W]
Ciss
[pF]
Qg
[nC]
V
R
(on) max [mΩ]
(V =4V)
GS
V
IN
[V]
Set size
[inch]
DSS
[V]
GSS
[V]
D
D
DSS
[V]
DS
connection
V
=10V
GS
V
=4(4.5)V
Type No.
Package
VEC8
Polarity
Use example
GS
[A]
typ
max
typ
0.72
0.4
max
VEC2402
ECH8606
ECH8402
Nch+Nch
Nch+Nch
Nch
30
30
30
30
30
30
30
30
30
30
30
99
75
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
30
30
30
30
20
30
30
30
30
30
30
30
30
30
30
30
30
30
20
30
30
30
30
30
30
30
30
30
20
30
12
30
20
20
20
20
10
10
10
10
10
10
10
10
10
10
20
20
20
20
10
10
9
1
1.4
1.2
1.8
1
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.9
0.9
0.8
0.8
0.8
0.8
0.9
0.9
0.9
0.9
1
0.42
0.23
0.32
0.16
0.38
2.9
0.55
0.3
1
75
65
2.6
2.5
3.3
3.2
1.5
1.58
1.43
1.58
2
MCH6627
MCH6644
MCH6628
MCH6613
MCH6614
MCH6615
MCH6634
CPH6614
CPH6615
CPH6605
CPH6610
VEC2602
VEC2612
EMH2602
EMH2603
M11
M11
M11
M11
M11
M11
M11
M12
M12
M07
M07
M13
M13
M13
M30
M26
Push-Pull
●
●
●
0.56
0.83
0.42
0.76
5.2
ECH8
32
0.42
0.21
0.5
0.59
0.3
104
95
Pch
168
99
VEC2602
VEC2612
ECH8609
Nch
0.54
3.7
115
7
VEC8
ECH8
Small Screen
2.5 to 8
Pch
168
161
120
75
5 to 12
0.35
0.2
0.35
0.4
0.35
0.4
0.65
0.4
0.7
1.2
1.8
1.8
2.5
1.5
0.65
0.4
1.4
3
3.7
Nch
Half-Bridge
Full-Bridge
8
10.4
3.7
11
15.4
5.2
7.5
7
MCPH6
Pch
2.9
3.7
Nch
2.4
3.1
3.5
4.9
28
ECH8402
ECH8302
Nch
32
2.9
3.7
3.7
5.2
7
1.58
2
Pch
48
2.4
3.1
3.5
4.9
28
0.9
1.2
1.2
1.7
30
2.34
0.83
1
[Bipolar Transistor Use Example]
1.5
1.9
2
2.8
40
0.7
0.9
0.8
1.15
0.83
0.41
0.45
0.21
0.34
1.7
30
0.32
0.15
0.18
0.42
0.195
0.235
0.105
0.235
1.2
0.59
0.29
0.32
0.15
0.24
1.2
104
95
3.3
3.2
5.5
5.2
3.2
2.34
0.83
2.5
11
Self-Excitation Type
●
●
V
IN
226
187
40
0.079
0.18
0.9
Q1
Q2
CPH6
VEC8
30
1.4
1.8
2
2.8
40
20
20
20
20
20
20
20
10
10
10
10
0.245
0.065
0.037
0.073
0.065
0.053
0.115
0.165
3.7
0.32
0.086
0.048
0.095
0.086
0.069
0.15
0.235
5.2
0.415
0.117
0.07
0.115
0.117
0.105
0.215
0.26
6.4
0.58
0.168
0.099
0.161
0.168
0.15
0.31
0.52
12.8
0.31
3.7
65
510
370
180
510
280
285
420
7
●
●
●
●
4
8.5
4.9
11
3
3
2
6.4
6.7
5
3.5
2
1
EMH8
SCH6
Bipolar Transistors
1.1
0.6
0.6
0.6
0.15
1.5
0.35
2
V
CES
I
V
Set size
[inch]
C
IN
Type No.
Package
Polarity
(*V
CBO)
[V]
Use example
-
-
0.235
2.9
160
7
2.6
1.58
[A]
[V]
SCH2602
M07
-
-
CPH5503
CPH5504
NPN+NPN
NPN+NPN
40*
80
3
3
Small Screen
2.5 to 8
M11
M12
M13
M26
M30
CPH5
5 to 12
Self-Excitation Type
D1
G2
S2
D
S
D
G
D1 D1 D2 D2
D1
D1 G1/D2
D2
D1
G1
D
G
S
S
D
G
G
S
S1 G1 S2 G2
S1
G2
S2
G2
S
S1
G1
D2
8
9
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Devices for Mobile Equipment
Flash Unit
Condenser Microphone
■
■
[Use Example]
[High-Frequency Devices Use Example]
FRD
Battery
300V
Trans
The electric capacity changes
Mobile phone
Hands-free
Sound
Xe-
Digital camera
Digital video camera
Portable games
other
diaphragm
Back plate
Trigger
transformer
I
G
C
M
IGB
V
V
CC
OUT
S
D
Control IC
S/W element
Impedance transformation
Electric signal output
High-Frequency Devices for Condenser Microphone
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
Bipolar Transistors (NPN)
I
V
|yfs|
typ(*min)
[mS]
Ciss
typ
[pF]
Crss
typ
[pF]
G
V
V
NO
DSS
[mA]
GDS
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
(sat) [V]
Type No.
Package
I
P
D
[mW]
D
V
typ
max
GDO
[V]
[mA]
h
V
CE
FE
[dB]
[dB]
Type No.
Package
Polarity
min
max
0.35
0.35
0.35
0.35
0.35
0.35
0.35
V
I
P
C
[W]
CEO
[V]
C
I
I
C
B
[A]
min
max
typ
max
TF246
20
20
20
20
20
20
20
1
1
1
1
1
1
1
30
0.14
0.14
0.14
0.14
0.14
0.14
0.14
1.0
1.4
1.0
1.4
1.0
1.4
1.4
3.5
3.1
3.5
5.0
3.5
5.0
3.1
0.65
0.95
0.65
1.1
-3.0
1.0
-110
-102
-110
-102
-110
-102
-102
[A]
[mA]
USFP
TF252
30
CPH3223
CPH3236
NPN
NPN
50
50
3
3
0.9
0.9
200
250
560
400
1
50
50
0.09
0.06
0.13
0.1
CPH
TF202C
TF222B
TF218THC
TF208TH
TF252TH
100
100
100
100
100
-3.0
-2.0
-3.0
-2.0
1.0
1
TSSFP
0.65
1.1
MOSFETs (Nch)
: New products
●
VTFP
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
(on) [Ω]
0.95
R
DS
Type No.
Package
Polarity
V
V
I
P
D
[W]
Ciss
[pF]
Qg
[nC]
DSS
[V]
GSS
[V]
D
V
=10V
V
GS
=4V
V
=2.5V
GS
GS
[A]
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
typ
max
typ
max
typ
max
Package
(unit: mm)
Ci
typ
Type No.
V
[V]
I
[μA]
DD
MCH6422
MCH6424
MCH6423
Nch
Nch
Nch
60
60
60
10
10
20
2
3
2
1.5
1.5
1.5
-
-
-
-
0.17
0.22
0.19
0.27
325
690
220
4.2
8.2
6.4
●
●
V
V
P
G
V
V
DD
IN
DD
D
NO
[V]
[V]
[mW]
[dB]
[dB]
MCPH6
0.085 0.115 0.095 0.135
0.21 0.3
[pF]
min
max
min
140
140
max
0.17
0.22
-
-
EC4K11KF
ECSP1410 (1.4×1.0×0.4)
±0.5
±0.5
4
4
100
100
2
2
3.6
3.6
2.7
2.7
100
200
12
12
-90
-90
EC4K14MF ECSP1410 (1.4×1.0×0.32)
Bipolar Transistors (NPN) + MOSFETs (Nch)
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
TR MOSFET
USB (3.3V) Signal Line Protection Devices
■
TR MOSFET
Type No.
Package
h
V
(sat) [V]
R
(on) [
Ω]
FE
CE
DS
=4V
Cob
typ
Ciss
typ
Qg
typ
[Use Example]
V
I
P
V
DSS
[V]
V
I
P
D
[W]
CEO
[V]
C
C
GSS
[V]
D
V
V
=2.5V
GS
I
C
I
GS
B
[A] [W]
[A]
min max
typ max
[pF]
[pF] [nC]
[A]
[mA]
typ max typ max
Vbus
Shorted for use
VEC2901
VEC8
50
5
1.1 30
10 0.15 0.25 250 400 26 1.6 53 0.055 0.11 2.9 3.7 3.7 5.2
7
1.58
D–
D+
USB
Controller
IGBT Drivers
I
+/I -typ [mA]
O
O
V
min
[V]
V
IL
max
[V]
IH
V
V
/ V
P
D
[W]
DD
[V]
IN
OUT
[V]
Type No.
Package
V
CL [pF]
5000
=5V
V
=2.5V
DD
DD
CL [pF]
TND721MH5
MCPH5
-0.3 to 7.5
-0.3 to V +0.3
DD
0.8
2
1
50
5000
10
Flash Circuit IGBTs
: New products
●
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
Recommended Device
Noise clamping of USB eye patterns
V
I
(off) [V]
min
V
V
(sat) [V]
Cies
f
GE
CE
V
(DC)
GES
Type No.
Package
Polarity
V
I
CP
[A]
CES
[V]
C
[pF]
T
V
R
[V]
V
I
V
typ
[pF]
CE
C
C
GE
[V]
CE
Abnormal signals of 4.0V or more
eliminated (overshoot eliminated)
max
min
max
V
[V]
I
[μA]
=2.5V
f=1MHz/
V
R
F
L
[V]
[V]
10
10
[mA]
[A]
[V] [MHz]
Type No.
Package
I =1mA
F
V
=0V
typ
R
I
=1μA
I
=1mA
R
R
TIG030TS
TIG032TS
Nch
Nch
400
400
±6
±6
150
180
1
1
0.5
0.4
1.2 150
4
3.7
3.4
5.4
4.8
10
10
1
1
2610
5100
●
●
min
max
TSSOP8
+D
–D
1
150 2.5
VS002E4 ECSP1608-4
3.4
4.0
0.35
1
16
FRD
V
I
t
max
rr
F
R
V
I
O
R
Type No.
Package
I =0.1A
F
[V]
V
=400V
I
=I =100mA, See specified test circuit
R
R
F
[V]
[mA]
[μA]
[ns]
Abnormal signals of 0.35V or more
eliminated (undershoot eliminated)
RE0208DA
SOD-323
800
200
4.0
3
55
10
11
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Devices for Mobile Equipment
Devices for Motor
■
[MOSFETs Use Example]
Devices for Fan Motor
[Bipolar Transistor Use Example]
Single-phase Motor (H-Bridge, Half pre.): #5
Single-phase Motor (H-Bridge): #6
Three-phase Motor: #7
• For the purpose of power consumption reduction,
low saturated voltage transistor is recommended.
• PCP and TP packages with good radiation are
recommended.
• Composite type (B-E bias resistor, and C-E diode
are embedded) is recommended for miniaturization
purpose.
Q1
Q3
Q5
LB11660V
Motor Driver
V
CC
Q1
Q2
Q3
Q4
V
IN
M
M
M
Q2
Q4
Q6
Q1
Q2
H
GND
Hall element
GND
MOSFETs
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
(on) [Ω]
Bipolar Transistors
: New products
●
R
Use
example
DS
Type No.
Package
Polarity
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
V
V
I
P
D
[W]
Ciss
[pF]
Qg
[nC]
DSS
[V]
GSS
[V]
D
V
=10(15)V
V
=4(4.5)V
GS
GS
[A]
h
V
(sat) [V]
Complementary
product
FE
CE
typ
max
0.15
0.89
0.22
0.3
typ
max
Type No.
Package
Polarity
V
I
P
C
[W]
CEO
[V]
C
I
I
B
[mA]
C
[A]
min
max
typ
max
MCH3410
MCH3421
MCH6423
CPH3418
CPH3424
CPH3427
VEC2402
CPH6616
Nch
Nch
30
20
20
20
20
20
20
20
20
2
0.8
2
0.9
0.9
1.5
0.9
1
0.115
0.68
0.17
0.23
0.17
0.48
0.037
0.079
0.19
0.85
0.21
0.4
0.27
1.2
120
165
220
65
3.6
4.8
6.4
2.5
6.4
6.5
8.5
5.2
[A]
1.5
1.5
1
MCPH3
MCPH6
100
60
2SA2124
2SA2012
2SA2125
2SA2013
2SA1416
2SA1417
2SA2126
2SA2039
2SA2040
2SA2169
2SA1592
2SA1593
2SA1552
2SC6044
2SC5565
2SC5964
2SC5566
2SC3646
2SC3647
2SC5706
2SC5707
2SC6017
2SC4134
2SC4135
2SC4027
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
30
30
50
50
2
5
1.3 *2
1.3 *3
1.3 *3
1.3 *3
1.3 *3
1.5 *3
15 *1
15 *1
15 *1
20 *1
10 *1
15 *1
1
1.3 *2
1.3 *3
1.3 *3
1.3 *3
1.3 *3
1.5 *3
15 *1
15 *1
20 *1
10 *1
15 *1
1
200
200
200
200
100
100
200
200
200
200
100
100
100
200
200
200
200
100
100
200
200
200
100
100
100
560
560
560
560
400
400
560
560
560
560
400
400
400
560
560
560
560
400
400
560
560
700
400
400
400
75
0.2
0.14
0.125
0.105
0.2
0.4
0.21
0.23
0.18
0.6
2SC6044
2SC5565
2SC5964
2SC5566
2SC3646
2SC3647
-
●
●
Nch
0.3
30
Nch
30
1.4
1.8
1
0.56
0.3
#5
3
50
CPH3
Nch
60
0.22
0.63
0.048
0.105
0.21
0.58
0.07
0.15
220
240
370
187
PCP
4
1
50
Nch
100
30
1
0.81
0.099
0.21
100
100
50
1
0.4
1
40
VEC8
CPH6
Nch+Nch
Nch+Nch
4
0.9
0.9
2
100
50
0.22
0.135
0.115
0.23
0.29
0.2
0.6
30
2.5
3
1
0.27
0.195
0.39
0.58
0.6
●
●
50
5
1
50
2SC5706
2SC5707
2SC6017
2SC4134
2SC4135
2SC4027
2SA2124
2SA2012
2SA2125
2SA2013
2SA1416
2SA1417
2SA2039
2SA2040
2SA2169
2SA1592
2SA1593
2SA1552
MOSFETs (Pch+Nch)
50
8
3.5
5
175
250
40
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
(on) [Ω]
TP
50
10
1
R
Use
example
DS
100
100
160
30
0.4
1
Type No.
Package
Polarity
V
V
I
P
D
[W]
Ciss
[pF]
Qg
[nC]
DSS
[V]
GSS
[V]
D
V
=10V
V
=4(4.5)V
GS
GS
2
100
50
0.22
0.2
0.6
[A]
typ
max
typ
max
1.5
2
0.5
1.5
1.5
1
0.5
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
30
30
30
30
30
30
35
35
60
60
60
60
20
20
20
20
20
20
20
20
20
20
20
20
20
20
3
4
0.9
0.9
1.3
1.3
1.8
1.8
1.8
1.8
2
0.065
0.037
0.05
0.086
0.048
0.067
0.034
0.053
0.048
0.049
0.033
0.145
0.058
0.145
0.145
0.315
0.22
0.117
0.07
0.168
0.099
0.12
510
370
550
510
1000
460
1224
1050
990
790
990
300
935
530
11
8.5
2.2
11
75
0.17
0.125
0.1
0.26
0.19
0.15
0.13
0.4
●
●
VEC2602
ECH8609
FW340
FW377
FW356
FW359
FW360
VEC8
ECH8
#6
30
5
30
4
0.087
0.052
0.07
50
3
50
PNP
6
0.025
0.041
0.037
0.037
0.025
0.11
0.075
0.098
0.09
50
4
1
50
0.085
0.1
5
16.5
8.6
24
100
100
50
1
0.4
1
40
#6, #7
5
0.064
0.062
0.043
0.15
2
100
50
0.13
0.09
0.16
0.18
0.1
0.4
5
0.087
0.061
0.21
5
1
0.135
0.24
0.36
0.4
6
20
50
8
3.5
5
175
250
40
3.5
5
22
50
10
1
●
SOP8
#7
#6
TP
2
0.043
0.11
0.056
0.145
0.15
0.084
0.205
0.215
0.45
16
100
100
160
0.4
1
3
1.8
1.8
1.4
1.4
22
2
100
50
0.13
0.13
0.4
3
0.11
7.8
20
1.5
0.5
0.45
*1: Tc=25˚C *2: When mounted on ceramic substrate (450mm2×0.8mm) *3: When mounted on ceramic substrate (250mm2×0.8mm)
100
100
2
0.24
0.32
#6, #7
2
0.175
0.22
0.31
13
Bipolar Transistors: Built-in Damper Diode
: New products
●
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
MOSFETs
h
V
(sat) [V]
FE
CE
V
F
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
(on) [Ω]
Type No.
Package
Polarity
V
I
P
[W]
R
BE
(kΩ)
CEO
[V]
C
C
I =0.5A
F
I
I
C
B
R
Use
example
DS
[A]
min
typ
max
Type No.
Package
Polarity
V
V
I
P
D
[W]
Ciss
[pF]
Qg
[nC]
[V]
DSS
[V]
GSS
[V]
D
[A]
[mA]
V
=10(15)V
V
=4(4.5)V
GS
GS
[A]
2SB1397
2SB1325
2SB1324
2SB1739
2SD2100
2SD1999
2SD1998
2SD2720
PNP
PNP
PNP
PNP
NPN
NPN
NPN
NPN
20
20
30
30
20
20
30
30
2
4
3
3
2
4
3
3
1.3 *3
1.5 *3
1.5 *3
1.5 *3
1.3 *3
1.5 *3
1.5 *3
1.5 *3
70
70
70
70
70
70
70
70
1
50
0.25
0.25
0.25
0.28
0.25
0.25
0.2
0.5
0.5
0.6
0.6
0.5
0.5
0.5
0.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.6
1.5
0.8
0.8
1.6
1.5
0.8
0.8
typ
max
typ
max
PNP
TP
3
150
100
100
50
2SJ646
Pch
Pch
Pch
Nch
Nch
Nch
30
60
20
20
20
20
20
20
8
8
5
8
8
6
15
20
20
10
15
15
0.058
0.105
0.24
0.075
0.138
0.312
0.115
0.15
0.097
0.145
0.32
0.136
0.205
0.45
510
990
935
260
300
530
11
22
20
6
#6, #7
#7
2
2SJ634
TP
TP
2
●
●
2SJ637
100
30
1
2SK4067
2SK3492
2SK3617
0.085
0.115
0.18
0.155
0.155
0.225
0.22
#6, #7
#7
PNP
TP
3
150
100
100
60
0.22
7.8
13
2
100
0.225
0.315
2
0.23
*1: Tc=25˚C *2: When mounted on ceramic substrate (450mm2×0.8mm) *3: When mounted on ceramic substrate (250mm2×0.8mm)
12
13
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Devices for SW Power Supply
Switching Power Supply Types & Recommended Power MOSFETs Map
Switching Devices
■
■
[MOSFET/FRD/SBD Use Example]
Universal AC Input
20
Forward (1 or 2 used)
: 600 to 800V
V
DSS
Full-bridge (4 used)
: 450 to 500V
V
DSS
14
SBD
SBD
DC
Flyback
Output
RCC or PWM
8
6
V
: 600 to 800V
DSS
Half-bridge (2 used)
: 450 to 500V
When output becomes large, a high V
DSS
is required for the device
V
DSS
ex) Flyback Circuit
Output 80W → V
Output 120W → V
≥600V
≥700V
DSS
DSS
Output Power/P
OUT
[W]
(1) Power MOSFET/SBD/FRD for Adapter
30
50
100
150
200
250
300
350
400
450
500
Recommended Devices
Set Spec
PFC
Main SW
MOSFET
Rectifier
Application Example
■
V
OUT
[V]
I
OUT
[A]
Applications/Power
MOSFET
SBD
5
2.0 to 4.0
1.0 to 2.0
SBT80-04J
Game machine
50W
2SK4086LS
(600V/0.58Ω)
-
-
(1) Flyback Circuit
SBD
12
SBT100-16JS
V
CC
DC
Output
Notebook PC
65W
2SK4087LS
(600V/0.47Ω)
20
2.0 to 4.0
2.0 to 4.0
3.0 to 5.0
SBT100-16JS
Main SW
MOSFET
5
SBT80-04J
SBT150-10JS
SBT100-16JS
General-purpose
75 to 90W
2SK4085LS
500V/0.33Ω
2SK4087LS
(600V/0.47Ω)
12
24
Main Control
(2) Power MOSFET/SBD/FRD for other power supply
Recommended Devices [Other sets]
SBD
(2) Forward Circuit
V
CC
DC
Output
: Development
❈
SBD
Set Specification
PFC
Main SW
MOSFET
Rectifier
Main SW
MOSFET
Power
[W]
Set
Specification
FRD
MOSFET
SBD
(1) Flyback
Main Control
For low-output use (up to 150W)
few externally-conneted parts required
1 MOSFET is used for switching
Domestic (Japan)
W/W
50
-
-
2SK4096LS
2SK4098LS
2SK4087LS
2SK4097LS
2SK4125
SBT150-10JS
SBT150-10JS
SBT100-16JS
SBT80-06J
Printer
50
-
-
BL DVD recorder
DVD recorder
Desktop PC
PDP TV
Domestic (Japan)
Domestic (Japan)
W/W
100
60
RD0506LS
-
2SK4097LS
-
❈
V
CC
(3) Half-Bridge Circuit
(2) Forward
Usable for middle-large ouput (100 to 300W)
Pulse IN
>200
>300
RD1006LS
RD1006LS
2SK4085LS
2SK4124
SBT350-04J
SBT100-16JS
❈
❈
Several switching MOSFETs can be used in parallel
Several switching MOSFETs can be used
W/W
2SK4124
SBD/FRD
Main SW
MOSFET
DC
Output
(3) Half-Bridge
For middle output (<150 to 400W)
MOSFET with a lower voltage than flyback or
Forward voltage can be used
2 switching MOSFETs are used
Main SW
MOSFET
SBD/FRD
V
CC
(4) Full-Bridge Circuit
(4) Full-Bridge
For high output (>300 to 400W)
MOSFET with a lower voltage than flyback or
forward voltage can be used
4 switching MOSFETs are used
SBD
DC
Output
SBD
Main SW
MOSFET
14
15
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Devices for SW Power Supply
LCD TV
■
(3) Bipolar Transistors for Adapter
[Bipolar Transistor Use Example]
Recommended Devices by LCD-TV Panel Size
(1) When BL inverter is half-bridge circuit, and AV output is flyback circuit
Output
+5.6 to 5.8V/600 to 700mA
Main
S/W Tr
PFC Circuit
Half-Bridge Power Supply
Starting
resistor
AC Input
ACIN
V
CC
PFC FRD(1)
Pulse IN
-
R
BE
SBD(2)/FRD(2)
Main SW
MOSFET(2)
PFC
DC
Output
Control
Thermistor
PFC
MOSFET(1)
Main SW
MOSFET(2)
SBD(2)/FRD(2)
Control IC
Flyback Power Supply
DC
Output
SBD(1)
SBD(1)
Bipolar Transistors [V
=700V/800V Series (AC Adapter)]
CBO
: Development
❈
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
Input
Voltage
[V]
AC Adapter
Circuits
[W]
Main SW
MOSFET(3)
h
V
CE
(sat) [V]
FE
Type No.
Package
V
V
I
C
CBO
[V]
CEO
[V]
I
I
I
B
C
C
[A]
min
max
max
[A]
0.1
0.3
0.1
0.1
0.1
0.1
0.1
0.1
0.1
[mA]
700
1200
500
700
500
500
500
500
500
[mA]
140
240
100
140
100
100
100
100
100
Main Control
2SC5823
TP
TP
700
700
700
700
700
700
800
700
700
400
400
400
400
350
400
350
350
400
1.5
2.5
1.0
1.5
1.0
1.0
1.0
1.0
1.0
20
20
50
50
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
100/220
100/220
100/220
100/220
100
3/6
4/8
* For under 21inch, also used for
BL inverter power supply.
2SC5808
TT2240NMP
2SC6065-V
2SC6083
NMP
NMP
SPA
15
30
1.5/3
3/6
❈
❈
20
50
100
50
200
100
200
200
100
1.5
2SC6083A
2SC6146
SPA
100/220
220
1.5/3
3
Lineup
◆
: Development
❈
SPA
100
100
50
SPS for
AV Processor
SPS for
BL Inverter
Set Spec
PFC
2nd Rectifier
CPH3249
CPH3249A
CPH3
CPH3
100/220
100/220
1.5/3
1.5/3
Panel Size
[inch]
P
V
SBD(1)
SBD(2)/FRD(2)
OUT
OUT
[V]
FRD(1)
MOSFET(1)
MOSFET(2)
MOSFET(3)
[W]
2SK4086LS
(also used for
BL power supply)
SBT80-06J(1)
up to 21
70
5/12
-
-
-
SBT100-16JS(1)
SBT100-16JS(1)
SBT100-16JS(2)
SBT100-16JS(1)
SBT150-10JS(2)
SBT100-16JS(2)
SBT150-10JS(1)
RD2004LS(2)
5 to 12
24
26 to 32
37 to 42
150
250
RD1006LS
2SK4085LS
2SK4124×2
2SK4098LS
2SK4098LS
2SK4096LS×2
2SK4097LS×2
❈
❈
5 to 12
24
RD0506LS
RD1006LS
5 to 12
24/60
at least 42
350
2SK4124×3
2SK4101LS
2SK4084LS×2
❈
[Power supply block]
• Circuit
For under 21inch, used for both AV processor (main power supply) and BL inverter power supply.
For larger than 26inch, 2-power supply system is usually used (one is for BL inverter use, and the other is for AV processor use).
• Secondary-side diode voltage
In case of flyback circuit, diode voltage should be 100V and above for 12V output (when PFC output is 380V).
In case of half-bridge circuit, diode voltage should be 100V and above for 24V output (when PFC output is 380V).
16
17
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Devices for SW Power Supply
(2) The example when BL inverter adoptes PFC voltage direct input circuit, and AV output adopts flyback circuit
(3) Devices for BL Inverter
1) Recommended Devices for Bridge Circuit
Push-Pull Type
PFC Circuit
ACIN
[Feature]
PFC FRD(1)
• Compared with half-bridge type, although doubled voltage is needed, meanwhile RDS(on) can be suppressed due to the use of Nch,
so a good symmetry can be achieved.
Because the current capacity is large, multi tubes driving can be made possible, and the needed parts count can be reduced.
PFC Direct input BL Inverter
Main SW
FRD(2)
Multi CCFL, Parallel
MOSFET(3)
FRD(2)
Set Size
[inch]
V
IN
[V]
CCFL
CCFL
CCFL
Pulse IN
Separately-excitation
Package
Polarity
Type No.
PFC
Control
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
2SK3285 (30V/34m )
Ω
up to 12
PFC
MOSFET(1)
Driver
VIN
2Sk3352 (30V/21m )
Ω
FRD(2)
FRD(2)
N1
SMP
2SK3816 (60V/41m )
21 to 32
Ω
15 to 24
2SK3818 (60V/18m )
Ω
2SK2592 (250V/200m )
at least 60
Ω
Main SW
MOSFET(3)
2SK3703 (60V/28m )
Ω
2SK3704 (60V/15m )
15 to 24
Ω
2SK2160 (200V/350m )
Ω
TO-220ML
TO-220FI
at least 32
2SK2161 (200V/250m )
Ω
Flyback Power Supply for AV Processor
N2
2SK4096 (500V/710m )
at least 60
Ω
2SK4084 (500V/400m )
Ω
DC
Output
SBD
Nch + Nch VEC2402 (30V/99m )
Ω
VEC8
(VECxxxx)
ECH8
(ECH8xxx)
TSSOP8
Nch + Nch ECH8606 (30V/75m )
Ω
SBD
5 to 12
Main SW
MOSFET(2)
Nch
ECH8402 (30V/32m )
2.5 to 8
Ω
Nch + Nch FTD8009 (30V/33m )
Ω
(FTSxxxx(single))
(FTDxxxx(Dual))
Main Control
Nch + Nch ECH8616 (60V/133m )
15 to 24
5 to 12
Ω
Nch + Nch FW241 (30V/150m )
Ω
Nch + Nch FW261 (30V/83m )
Ω
Nch + Nch FW803 (30V/27m )
Ω
N1
Nch
Nch
FSS250 (30V/54m )
Ω
FSS804 (30V/20m )
Ω
Lineup
◆
: Development
❈
Nch + Nch FW808 (30V/37m )
Ω
SOP8
Set Spec
PFC
Direct BL Inverter
FRD(2) MOSFET(3)
SPS for AV Processor
MOSFET(2)
2nd Rectifier
(FSSxxxx(single)) Nch + Nch FW250 (60V/215m )
15 to 19
Ω
Panel Size
[inch]
P
V
OUT
[V]
OUT
(FWxxxx(Dual))
FRD(1)
MOSFET(1)
SBD
Nch + Nch FW256 (60V/84m )
Ω
[W]
200
250
350
Nch
FSS273 (45V/34m )
15 to 24
Ω
26 to 37
37 to 42
12
RD1006LS 2SK4085LS
RD0506LS 2SK4086LS×2
RD0506LS 2SK4086LS×2
RD1006LS 2SK4085LS×2
2SK4098LS
2SK4098LS
2SK4101LS
SBT100-16JS
SBT100-16JS×2
SBT100-16JS×2
❈
❈
❈
❈
❈
❈
Nch+Nch FW248 (45V/42m )
Ω
12 to 18
12 to 18
RD1006LS
RD1006LS
2SK4124×2
2SK4124×3
Nch
FSS275 (60V/62m )
Ω
N2
at least 42
Nch + Nch FW257 (100V/220m )
Ω
Nch + Nch FW225 (450V/11.2 )
at least 120
5 to 12
Ω
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
Nch
SFT1402 (35V/40m )
Ω
SFT1403 (35V/25m )
Ω
2SK3352 (30V/21m )
Ω
SFT1407 (45V/29m )
Ω
SFT1405 (45V/74m )
Ω
TP
SMP
2SK3615 (60V/85m )
at least 32
Ω
15 to 24
2SK3816 (60V/41m )
Ω
2SK3818 (60V/18m )
Ω
2SK1920 (250V/700m )
Ω
2SK3092 (400V/2.3 )
at least 120
Ω
2SK3850 (600V/18.5 )
Ω
18
19
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Devices for SW Power Supply
Full-bridge Type, Half-bridge Type
Self-excitation Type (collector resonance)
[Feature: Full-bridge/Half-bridge Type]
[Feature]
• Pch/Nch drive
• Multi tubes can be driven by using a power device with large current capacity.
• A large current device can drive multi tubes, thus the needed parts count can be reduced.
also, the number of inverter circuits and used parts can be reduced.
→
• 4 to 8 tubes can be driven by circuit.
• Best choice for low-cost sets.
[Feature: Half-bridge Type (High voltage input)]
• A highly effiective system can be achived by using a high side driver, whitch can make the inverter cicuit to be operated at a PFC
voltage level.
MOSFET should be Nch type and withstand a high voltage.
Set Size
[inch]
V
IN
[V]
Self-excitation
Package
Type No.
2SC5915 (120V/10A)
2SC5999 (120V/25A)
2SC5888 (80V/10A)
V
IN
Set Size
[inch]
V
IN
[V]
Separately-excitation
Package
Polarity
Nch
Type No.
SMP
at least 32
at least 32
15 to 24V
Q1
Q2
2SK3815 (60V/55m )
Ω
Full-Bridge
12 to 24
up to 15V
Pch
2SJ659 (60V/133m )
Ω
TO-220ML
TO-220FI
SMP
at least 32
2SC6080 (80V/13A)
2SC5264 (800V/5A)
up to 15V
Nch
2SK3819 (100V/130m )
Ω
P1
N1
P2
N2
at least 100V
at least 60
12 to 24
Pch
2SJ664 (100V/136m )
Ω
2) Recommended Power MOSFETs & Bipolar Transistors by Monitor Size
[Power MOSFET Lineup by Input Voltage and Monitor Size]
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Nch
2SJ3702 (60V/55m )
Ω
2SJ650 (60V/135m )
Ω
2SK3706 (100V/130m )
Ω
PCP Package
SOP8 Package
TP Package
2SJ655 (100V/136m )
Ω
TO-220ML
TO-220FI
at least 32
V
I
V
I
V
I
D
[A]
DSS
[V]
D
DSS
[V]
D
DSS
[V]
2SK2161 (200V/350m )
Ω
Type No.
Type No.
Type No.
at least 60
[A]
[A]
2SJ405 (200V/500m )
Ω
2SK3614
2SK3944
2SJ632
60
60
60
30
30
30
4
FW250
FW359
FW248
FW349
60
60
45
45
3
2SK3978
2SK3977
SFT1202
SFT1201
SFT1305
SFT1307
SFT1405
SFT1407
SFT1403
SFT1402
200
100
180
150
45
4
2SK4096 (500V/710m )
Ω
Half-Bridge (Nch + Pch)
2
3
4
2SK4084 (500V/400m )
Ω
2
6
2
Nch + Pch VEC2602 (30V/99
Nch + Pch ECH8609 (30V/75
•
168m
)
Ω
2SK3489
2SK3490
2SJ616
8
4
2.5
10
14
10
14
11
14
•
120m
)
Ω
VEC8
(VECxxxx)
ECH8
5 to 12
8
Nch
Pch
ECH8402 (30V/32m )
Ω
2.5 to 8
P1
N1
6
45
ECH8302 (30V/48m )
Ω
45
(ECH8xxx)
Nch + Nch ECH8616 (60V/133m )
Ω
15 to 24
45
Pch + Pch ECH8615 (60V/295m )
Ω
35
Nch + Pch FW344 (30V/150•147m )
Ω
35
Nch + Pch FW340 (30V/83•98m )
Ω
Nch + Pch FW342 (30V/52•98m )
5 to 12
Ω
Nch
Pch
FSS802 (30V/26m )
Ω
Monitor Size [inch] (Standard)
FSS163 (30V/31m )
Ω
Half-Bridge
SOP8
(FSSxxxx(single))
(FWxxxx(Dual))
20
32
Nch + Pch FW349 (30V/84•106m )
Ω
15 to 19
Nch + Pch FW359 (30V/215•205m )
Ω
[Bipolar Transistor Lineup by Input Voltage and Monitor Size]
15 to 24
P1
N1
Nch
Pch
FSS273 (45V/34m )
Ω
VEC8 Package
PCP Package
TP Package
SMP Package
V
I
V
I
V
V
CES
C
CES
[V]
C
CES
CES
FSS145 (45V/40m )
Ω
Type No.
[V]
Type No.
I
I
C
[A]
C
[A]
2.5
3
[A]
Type No.
V
Type No.
V
* CBO
[V]
* CBO
[V]
[A]
Nch
Pch
Nch
Nch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
Nch
Pch
2SK3351 (30V/21m )
Ω
VEC2202
VEC2201
120
100
2SC5974
2SC5999
2SC5915
700
120
120
7
2SJ646 (30V/154m )
Ω
PCP1201
PCP1202
2SC6095
2SC6096
2SC3647
2SC5991
2SC5990
2SC5964
2SC5994
150
180
120
120
120*
100
100
100
100
2.5
2
2SC6071
2SD1816
2SD1815
2SC6098
2SC6099
2SC5980
2SC5979
2SC5707
2SC5706
2SC6022
2SC6020
120
120*
120*
120
120
100
100
80
10
4
25
10
5 to 12
2SK3285 (30V/34m )
Ω
2SK3352 (30V/21m )
Ω
2.5
2
3
CPH3 Package
SFT1402 (35V/69m )
Ω
2.5
2
Half-Bridge (High +B Voltage)
V
(High)
IN
V
I
C
[A]
SFT1302 (35V/111m )
CES
[V]
Ω
2
Type No.
V
(Low)
IN
SFT1405 (45V/74m )
Ω
7
8
CPH3252
CPH3251
CPH3247
CPH3239
CPH3236
CPH3223
180
150
120
100
100
100
2
SFT1305 (45V/147m )
Ω
TP
SMP
4
5
at least 32
15 to 24
2
2SK3615 (60V/85m )
Ω
3
8
P1
N1
2.5
5
2SJ635 (60V/92m )
Ω
2
80
5
2SK3818 (60V/18m )
Ω
40*
40*
9
3
2SJ662 (60V/38m )
Ω
6
3
2SK3979 (200V/450m )
Ω
2SJ679 (200V/980m )
Ω
Monitor Size [inch] (Standard)
at least 120
2SK1920 (250V/700m )
Ω
2SJ281 (250V/2 )
Ω
8
20
32
20
21
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Devices for SW Power Supply
(4) Devices for Power MOSFET Buffer
2) High Voltage Driver ExPD
[ExPD Use Example]
1) Low Side Driver ExPD [MOSFET, IGBT Gate driver IC]
[Application]
• PDP, LCD-backlight, inverter light, liquid crystal projector, HID drive, motor drive, half-bridge/full-bridge power supply, etc.
• High withstand voltage driver (600V)
• Under-voltage protection function is built in
[ExPD Use Example]
MOSFET 1
• Withstand voltage of 25V is assured.
• 2 low side drivers in
• TTL/CMOS compatible
L
Load
Load
(V =2.6V or less at V =4.5 to 25V)
IH DD
• High-speed switching time
(t /t =typ 25ns, at 1000pF load [TND301S])
r f
MOSFET 1
Load
MOSFET 2
(Inverter)
(Buffer)
MOSFET 2
ExPDs
I
O
V
[V]
S
Type No.
Package
Features
Applications
Source
[mA]
Sink
[mA]
ExPDs
TND516SS
TND507S
600
600
200
250
400
500
Single-phase high side driver
●
●
Ballasts, PDP maintenance drive, DC/AC
motor drive, induction heaters, charging
circuits, high-frequency switching power
supplies, switching amplifi ers, and other
general-purpose driver applications
Operating
voltage range
[V]
Drive capability
V
max
P
max
[W]
V
min
V
max
DD
[V]
D
IH
[V]
IL
[V]
Type No.
Package
VEC8
Functions
SOP8
Single input/two output half bridge
driver circuits
Source [A]
Sink[A]
TND321VD
TND322VD
TND323VD
TND307TD
TND308TD
TND309TD
TND301S
TND302S
TND303S
TND304S
TND305S
TND306S
TND311S
TND312S
TND313S
TND314S
TND315S
TND316S
Dual inverter
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
0.2
0.2
0.2
0.25
0.25
0.25
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
4.5 to 25
0.8
1
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
2.6
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
TND508S
600
600
250
200
500
400
Dual buffer
0.8
0.8
1
1
1
1
1
1
2
2
2
1
1
1
2
2
2
1
1
1
TND512MD
3-phase high side driver
3-phase motor drive applicatioon
Inverter buffer
Dual inverter
Dual buffer
Two input/output half bridge driver
circuits.
Built-in shutdown function and
low-side priority circuit.
PDP maintenance drive, DC/AC motor
drive, ballasts, charging circuits,
high-frequency switching power supplies,
induction heaters, switching amplifiers,
and other general-purpose driver
applications
TSSOP8
1
TND505MD
TND506MD
600
600
250
250
500
500
Inverter buffer
Dual inverter
Dual buffer
1
MFP16
2
Two input/output half bridge driver
circuits.
Built-in shutdown function.
2
Inverter buffer
Dual inverter
Dual buffer
2
1
1
Inverter buffer
Dual inverter
Dual buffer
1
SOP8
2
2
Inverter buffer
Dual inverter
Dual buffer
2
1
1
Inverter buffer
1
* TND30x series: input terminal Hi Z (high impedance); TND31x/TND32x series: input pull-down resistor in.
22
23
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Devices for SW Power Supply
3) LCD-Backlight Inverter: ExPD
5) Air conditioner fan motor drive: ExPD
[TND512MD Use Example]
[TND3xx Use Example: MOSFET Driver]
Half-Bridge MOSFET
Full-Bridge MOSFET
Push-Pull MOSFET
VM
C16
104
C17
104
C1
1000μF
C2
104
T1
T2
T4
T4
T5
T6
TND3xx
C18
104
GND
V
DD
N1
P1
N1
P2
N2
UOUT
VOUT
WOUT
V
DD
V
DD
P1
N1
CCFL
GND
TND3xx
TND3xx
V
DD
N2
C23
472
C24
472
C25
472
CCFL
TND3xx
GND
GND
CCFL
V
CC
GND
R8
R7
R9
R10 R11
R12
R4
C3
10μF
C10
105
1.1kΩ
C11
105
C12 105
16 15 14 13 12 11 10
9
8
[TND3xx Use Example: High-side FET Drive, Various Applications]
TND512MD
D1 D2
1
2
3
4
5
6
7
Z3
DZD6.8
C13
105
D3
470Ω
C6
682
C5
682
C4
682
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
LB11696V
CTL
4) PDP Sustain Driver: ExPD
16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
R23
100kΩ
R21
10kΩ
[TND5xx, TND3xx Use Example]
J6 J7
R22
100kΩ
J4 J5
F/R
C8
104
C7
182
C9
C19 C21
104 104
R24
20kΩ
4.7μF
R24
20kΩ
D1
TND5XX
RD
PWMIN
HP
T1 to T6: 2SK2624
D1 to D3: DFD05TC
TND3XX
R5
R1
R2
PDP Panel
D2
D3
HOUT
VH
V
C3
DD
R3
R4
Vp
Cp
INA OUTA
INB OUTB
HIN
SD
C0
HFG
VL
R6
LIN
V
GND
DD
GND
LOUT
Control IC
24
25
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Devices for SW Power Supply
DC-DC Converter IC
■
6) Bipolar Transistors: Separately-excited Inverter (MOSFET for Gate Drive)
[Bipolar Transistor Use Example]
TN8D41A/51A, TN5D41A/51A/61A: Separately-excited step-down switching regulator
[Functions/Features]
• Large current
I
I
max 8A (TN8D41A/51A)
max 5A (TN5D41A/51A/61A)
• Built-in reference oscillator (150kHz)
• Built-in current limiter
O
O
• IC with large IC is recommended for driving large-capacitance MOSFET
• Composite type (PNP+NPN) is recommended for miniaturization purpose
• High efficiency
Vertical-type P-channel power MOSFET built-in • Built-in thermal shutdown circuit
• High withstand voltage V max 57V
• Built-in soft start circuit
• ON/OFF function (shared with soft start pin)
IN
• Five external parts
Full-Bridge
Push-Pull
Buffer Transistor Circuit
Type No.
TN5D41A
TN8D41A
TN5D51A
TN8D51A
TN5D61A
Type
Input voltage
10V to 40V
10V to 40V
20V to 48V
20V to 48V
30V to 48V
Output voltage/current
5V/5A
Channels
1ch
Power stage
Package
V
Step-down
Step-down
Step-down
Step-down
Step-down
Built-in (PMOS)
Built-in (PMOS)
Built-in (PMOS)
Built-in (PMOS)
Built-in (PMOS)
TO-220FI5H-HB
TO-220FI5H-HB
TO-220FI5H-HB
TO-220FI5H-HB
TO-220FI5H-HB
DD
V
DD
5V/8A
1ch
P2
N2
Buffer TR
P1
N1
12V/5A
1ch
Buffer TR
Buffer TR
N1
N2
Buffer TR
Buffer TR
12V/8A
1ch
CCFL
24V/5A
1ch
V
DD
GND
[ExPD Use Example]
GND
Buffer TR
Buffer TR
CCFL
SW
V
OUT
IN
V
1
3
IN
V
OUT
Pch MOSFET
Over
Temperature
Protect
GND
Under Voltage
Protect
Over Current
Protect
SENSE
Bipolar Transistors
OUTPUT
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
(sat) [V]
Internal chip
equivalent
product
h
V
CE
Electrical
FE
Type No.
Package Polarity
V
I
I
P
C
CEO
[V]
C
CP
+
--
COMP
connection
OSC
V
I
I
I
B
CE
C
C
[A]
[A]
[W]
min max
typ
max
SS
[V]
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
[A]
[A]
[mA]
+
5
2
SOFTSTART
Band Gap
PNP
MCPH5
30
30
30
30
50
50
30
30
30
30
30
30
50
50
50
50
0.7
0.7
0.3
0.3
0.5
0.5
0.7
0.7
1.5
1.5
2
3
3
0.5
0.5
0.5
0.5
0.5
0.5
0.6
0.6
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.01 200 500 0.2
0.05 300 800 0.2
0.01 200 500 0.1
0.01 300 800 0.1
0.01 200 500 0.1
0.01 300 700 0.1
0.01 200 500 0.2
0.05 300 800 0.2
0.1 200 560 0.75
0.1 200 560 0.75
0.1 200 560 1.5
0.1 200 560 1.5
0.1 200 560 0.5
0.1 200 560 0.5
10
0.11 0.22
30A02MH
MCH5541
MCH6542
MCH6545
CPH5541
CPH5506
CPH5516
CPH5518
CPH5524
B14
B13
B13
B14
B14
B14
B14
B14
+30C02MH
10 0.085 0.19
NPN
+
--
AMP
PNP
0.9
0.9
1
5
0.11 0.22
0.1 0.2
0.06 0.12
30A01M
+30C01M
FB
GND
4
NPN
MCPH6
5
+
PNP
10
10
10
50A02CH
+50C02CH
NPN
PNP
NPN
PNP
NPN
1
0.05
0.1
3
0.11 0.22
30A02CH
GND
GND
+30C02CH
10 0.085 0.19
3
5
15
15
75
75
10
10
0.25 0.375
0.15 0.225
0.17 0.26
0.16 0.24
0.23 0.38
0.13 0.19
CPH3115
+CPH3215
[Application Example for Power Supply Makers: Allows High Design Freedom]
5
PNP
CPH5
6
CPH3144
+CPH3244
NPN
2
6
PNP
NPN
PNP
NPN
1
3
CPH3116
+CPH3216
ACIN
1
3
3
6
0.1 200 560
0.1 200 560
1
1
50 0.115 0.23
50 0.09 0.13
CPH3123
+CPH3223
24V Output
PFC
Control
3
6
5/3.3V
Output
[Proposal]
1. Simplification of circuits
ACIN
B13
B14
2. Common-ization of circuits
3. Helps reduce designing time
PFC
Control
C1
E1
B2
E2
C2
C2
C1
B1
TN5D/8D
Series
5 to 8A Output
5/3.3V
Output
B1
B2
EC
26
27
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Devices for Lighting
Inverter light
■
[Bipolar Transistor Use Example: Ball Lamp]
[MOSFET Use Example]
D2
H
L1
DB1
D3 RD1006LS(600V/10A)
L1
D4
OUT1
OUT2
for Inverter circuit use
(2 devices are used)
Inductor
DB
Q2
C2
N
R2
Q3
V1
AC
C5
for PFC circuit
+
+
TND506
to
TND509
OUT3
OUT4
L2
C3
C2
C1
C4
C
Light
Light
Q4
+
C1
R
Q2
NPN
Control IC
R
R
Recommended Devices and Spec: Surface Mount Type
Recommended devices by inverter lighting set [AC=200V input]
Set output
Bipolar Transistors
8.2
7.8
6.2
3
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
PFC circuit
Inverter circuit
Remarks
(Fluorescent tube) [W]
0.6
Set
power
[W]
h
1
FE
h
2
FE
Type No.
Package Polarity
Merit
525V device is recommended when a
larger margin is needed.
V
V
I
C
2SK4136×2
2SK4181×2
2SK4136×2
2SK4181×2
CBO
[V]
CEO
[V]
32×2
V
[V]
I
V
[V]
I
CE
C
CE
C
[A]
0.3
1
min max
[A]
[A]
2SK4137×2
2SK4182×2
2SK4136×2
2SK4181×2
TT2264
NPN
NPN
700
700
400
400
5
0.03 50 100
5
0.15 at least 10 hFE of low current side is high up to 20
hFE of low current side
40×2
86×2
1
2
[ZP Package]
0.3
0.6
1.0
1.0
2.54
2.54
5.08
SPA
good surface radiation due to thin body
PD up better radiation than that of
SMP package. 10% PD up.
w
2SC6083A
5
0.1
50 100
5
0.5 at least 10
20 to 60
is high, package is small
2SK4138×2
2SK4183×2
2SK4138×2
2SK4183×2
7.8
10.0
6.0
TT2240NMP
TT2188
NMP
NPN
NPN
700
500
500
500
400
400
400
400
1
5
1
5
5
5
0.1
0.5
0.8
1.2
15
20
20
20
30
50
50
50
5
5
5
5
0.5 at least 10 Package is small
20 to 60
20 to 60
3
4
6
at least 10 tf=0.3μs
at least 10 tf=0.3μs
at least 10 tf=0.3μs
TT2146
TO-220 NPN
NPN
8
: New products
●
65 to 130
MOSFETs
TT2196
12
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
R
(on) [Ω]
DS
=10(15)V
P
D
[MOSFET Use Example: Ball Lamp]
Type No.
Package
V
V
I
D
[A]
Ciss
[pF]
DSS
[V]
GSS
[V]
Tc=25˚C
[W]
V
GS
typ
0.65
0.5
max
H
2SK4136
2SK4137
2SK4138
500
500
500
525
525
525
30
30
30
30
30
30
8
70
80
0.85
0.65
0.52
0.92
0.75
0.58
600
750
●
●
●
R1
NF
DB1
9.5
14
7.5
9
C5
100
70
0.4
1000
600
OUT1
ZP
C1
● 2SK4181
0.71
0.58
0.45
NTC1
Q1
2SK4182
2SK4183
80
750
●
●
N
13
100
1000
OUT2
C4
C6
PTC1
NTC2
Recommended Devices and Spec: Lead Type
Recommended devices by inverter lighting set [AC=200V input]
Set output
R3
C3
R2
OUT3
OUT4
4.5
10.0
+
PFC circuit
Inverter circuit
Remarks
3.2
C2
2.8
(Fluorescent tube) [W]
T1
[TO-220FI(LS) Package]
40×2
2SK4186LS
2SK4198LS×2
ZD1
ZD2
C7
R4
86×2
86×3
2SK4186LS×2 2SK4199LS×2
2SK4187LS×2 2SK4187LS×2
L2
0.9
1.2
1.2
0.7
0.75
: New products
●
MOSFETs
1
2
3
Absolute maximum ratings/Ta=25˚C Electrical characteristics/Ta=25˚C
MOSFETs
: New products
●
R
(on) [Ω]
DS
I
P
D
Tc=25˚C
[W]
D
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
Type No.
Package
V
V
Ciss
[pF]
Qg
[nC]
DSS
[V]
GSS
[V]
2.55
2.55
I
*
V
GS
=10(15)V
max
Dc
[A]
R
(on) [Ω]
DS
=10(15)V
Type No.
Package
Polarity
typ
0.9
V
V
GSS
[V]
I
P
D
[W]
Ciss
[pF]
Qg
[nC]
DSS
[V]
D
V
V
=4(4.5)V
GS
GS
[A]
2SK4098LS
2SK4099LS
2SK4086LS
2SK4087LS
600
600
600
600
30
30
30
30
7
33
35
37
40
1.1
660
815
-
-
●
●
●
●
typ
1.5
max
typ
max
8.5
11.5*
14*
0.72
0.58
0.47
0.94
0.75
0.61
2SJ281
Pch
Nch
Nch
250
200
250
30
30
30
3
6
4
30
20
30
2
-
-
-
-
-
-
420
1090
420
-
18.2
-
TO-220FI(LS)
1000 38.2
1200 46
2SK3979
2SK1920
PCP
0.32
0.5
0.45
0.7
●
28
29
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Devices for Lighting
Devices for Modem and Infrared Sensor
Emergency Lamp
Devices for Modem
[High-Voltage Transistor Use Example for MODEM Circuit]
■
■
[2SK4043LS Use Example]
T1
Lamp
Safety
&
Protection
FUSE
Modem
AC
Controller
Q1
+
Control IC
C1
FUSE
Q2
RS
+
Battery
D9
Transistors for Modem Circuit
: New products
●
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
(sat) [V]
MOSFETs
: New products
●
h
V
CE
FE
f
T
Type No.
Package
Polarity
V
I
P
C
[W]
CEO
[V]
C
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
(on) [Ω]
typ
[MHz]
I
I
B
[mA]
C
[A]
min
max
max
R
DS
P
[mA]
D
Type No.
Package
V
V
I
D
[A]
Ciss
[pF]
Qg
[nC]
DSS
[V]
GSS
[V]
Tc=25˚C
[W]
V
=2.5V
V
=4V
GS
GS
2SA1740
2SA1699
2SA1785
CPH3249A
2SC4548
2SC4002
PCP
NP
PNP
PNP
PNP
NPN
NPN
NPN
PNP
NPN
400
400
400
400
400
400
400
400
0.2
0.2
1
1.3
0.6
1
60
60
40
50
60
60
40
60
200
200
200
100
200
200
200
200
70
70
50
20
70
70
70
70
50
5
0.8
0.8
1
typ
max
typ
max
50
5
2SK4043LS
TO-220FI(LS)
30
10
20
20
0.016
0.021
0.017
0.024
3000
37
●
NMP
CPH
PCP
NP
200
10
20
100
5
1
0.6
1.3
0.5
1.3
1.3
0.8
0.6
0.6
1
●
0.2
0.2
1
50
HID Lamp
■
50
5
0.2
0.05
20
5
[MOSFET Use Example]
SOP8501
SOP8
0.2
0.6
*1: When mounted on ceramic substrate (250mm2×0.8mm)
V =15V
L
FRD
Devices for infrared sensor
■
[Junction FET Use Example]
V
H
V
L
HOUT
TND507S
TND508S
Optical lens
V
Reset
OUT
CC
IN
HFG
DISC
Signal
D
Sensor
Thre
Trig
(Infrared rays etc.)
SD
1
2
LOUT
GND
LB8555
- +
-
S
Timer IC
+
Thermal energy
Output
R
GND
-
+
GND
G
3
Amplifier
Comparator
MOSFETs
: New products
●
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
R
(on) [Ω]
DS
P
D
Type No.
Package
ZP
V
V
I
D
[A]
Ciss
[pF]
Qg
[nC]
DSS
[V]
GSS
[V]
Tc=25˚C
[W]
V
=10(15)V
GS
typ
max
0.85
1.6
1.25
2
Junction FET
: New products
●
2SK4136
500
500
500
600
600
30
30
30
30
30
8
5
70
25
30
30
33
0.65
1.2
600
550
700
700
660
-
●
●
●
●
●
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
2SK2617ALS
2SK2618ALS
2SK2625ALS
2SK4098LS
15
20
20
-
I
V
|yfs|
typ
[mS]
Ciss
typ
[pF]
Crss
typ
[pF]
DSS
[mA]
max
GDS
Type No.
Package
Typical Applications
V
I
P
D
[mW]
DSX
[V]
D
6.5
5
0.95
1.5
V
GDO
[V]
TO-220FI(LS)
[mA]
min
7
0.9
1.1
humanbody detection, temp.
detection, automatic switching, etc.
EC3A04B ECSP1006-3B
30
30
10
100
0.6
3
5
4
1.1
●
30
31
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Devices for Satellite/GPS
FM Transmitter
Satellite LNB
FM Transmitter
■
■
[Satellite LNB]
[Varactor Diode Use Example]
V
=+14.4V (From cigarette Lighter in a car)
CC
Frequency: 9 to 14GHz
RF IN
3.3V
LNA.
MIX
IF Amp.
3LN02M✕5
IF OUT
Lo
RF OUT
LO
Ultrahigh-Frequency Transistors
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
NF
|S21e|2
f
T
Type No.
Package
Block
V
I
P
C
CEO
[V]
C
typ
[GHz]
f
typ
f
V
I
typ
CE
C
[mA]
[mW]
[GHz]
[dB]
[GHz]
[V]
[mA]
[dB]
MCH4009
MCH4011
MCH4012
MCH4020
3.5
3.5
3.5
8
40
120
350
500
500
25
24
2
2
2
2
1.1
1.1
1.0
1.2
2
2
2
1
3
20
17
Lo/IF Amp.
Varactor Diode
100
200
150
3
50
14.5 Lo/IF Amp.
12 Lo/IF Amp.
17.5 Lo/IF Amp.
MCPH4
Absolute maximum
ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
20
3
100
50
16.5
5
Type No.
Package
C1
C2
∆Cm [%]
C1.0V/C4.0V
max
V
R
V
[V]
V
R
[V]
R
[V]
min
max
min
max
High-Frequency Schottky Barrier Diodes
: New products
●
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
EC2C01C
SVC710
SVC707
ECSP1008-2
MCPH3
SPA
15
15
15
1
18.5
18.5
21.5
21.5
4
3.5
3.5
4.5
4.8
5.0
4.8
3.0
Type No.
Package
Block
1
4
V
I
P
V
F
[mV]
Conversion Loss
C
R
F
[V]
[mA]
[mW]
[dB]
typ [pF]
1
18.58
21.26
4
3.61
4.73
SBX201C
CP
2
50
-
280
8.6
0.25
Mixer
●
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
GPS/XM Antenna Module
■
[GPS/XM Antenna Module]
ANTENNA
MODULE
NAVIGATION
SECTION
Frequency: 1.57 to 2.3GHz
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
RF IN
LNA.
LNA.
MIX
IF Amp.
IF
OUT
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
ESD
Lo
LO
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
High-Frequency Transistors
Absolute maximum ratings/Ta=25˚C
Electrical characteristics/Ta=25˚C
NF
|S21e|2
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
f
T
Type No.
Package
Block
V
I
P
C
[mW]
CEO
[V]
C
typ
[GHz]
f
typ
f
V
I
typ
[dB]
CE
C
[mA]
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
[GHz]
[dB]
[GHz]
[V]
[mA]
MCH4009
MCH4011
MCH4012
MCH4013
EC4H08C
EC4H09C
3.5
3.5
3.5
3.5
3.5
3.5
40
100
200
15
120
350
500
120
50
25
24
2
2
2
2
2
2
1.1
1.1
1.0
1.5
1.5
1.3
2
2
2
2
2
2
3
20
17
14.5
12
LNA
LNA
LNA
LNA
LNA
LNA
3
50
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
MCPH4
20
3
100
5
22.5
24
5
16
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
15
3
10
17
ECSP1008
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
40
120
26
3
20
16.5
32
33
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