Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected power switch
based on MOSFET technology in a
5 pin plastic surface mount
envelope, configured as a single
high side switch.
SYMBOL
PARAMETER
MIN.
UNIT
IL
Nominal load current (ISO)
6
A
SYMBOL
PARAMETER
MAX.
UNIT
APPLICATIONS
VBG
IL
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance
50
15
150
60
V
A
˚C
mΩ
General controller for driving
lamps, motors, solenoids, heaters.
Tj
RON
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS switch
Low on-state resistance
5 V logic compatible input
Overtemperature protection -
self resets with hysteresis
Overload protection against
short circuit load with
output current limiting;
latched - reset by input
High supply voltage load
protection
Supply undervoltage lock out
Status indication for overload
protection activated
Diagnostic status indication
of open circuit load
BATT
STATUS
POWER
MOSFET
INPUT
CONTROL &
PROTECTION
CIRCUITS
LOAD
Very low quiescent current
Voltage clamping for turn off of
inductive loads
GROUND
RG
ESD protection on all pins
Reverse battery and
overvoltage protection
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PINNING - SOT426
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
Ground
mb
B
I
2
Input
TOPFET
HSS
G
L
3
(connected to mb)
Status
S
3
4
1 2
4 5
5
Load
Fig. 2.
Fig. 3.
mb Battery
July 1996
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Clamping voltages
VBG
VBL
Battery to ground
Battery to load
IG = 1 mA
50
50
12
55
55
17
65
65
21
V
V
V
IL = IG = 1 mA
IL = 1 mA
-VLG
Negative load to ground
Supply voltage
Operating range1
battery to ground
-
VBG
5
-
40
V
Currents
VBG = 13 V
IL
IB
IG
IL
Nominal load current2
Quiescent current3
Operating current4
Off-state load current5
VBL = 0.5 V; Tmb = 85 ˚C
VIG = 0 V; VLG = 0 V
VIG = 5 V; IL = 0 A
VBL = 13 V; VIG = 0 V
6
-
-
-
A
0.1
2.2
0.1
2
4
1
µA
mA
µA
1.5
-
Resistances
RON
RON
RG
On-state resistance6
On-state resistance
Internal ground resistance
VBG = 13 V; IL = 7.5 A; tp = 300 µs
VBG = 5 V; IL = 1.5 A; tp = 300 µs
IG = 10 mA
-
-
-
45
70
60
90
-
mΩ
mΩ
Ω
150
INPUT CHARACTERISTICS
Tmb = 25 ˚C; VBG = 13 V
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
II
Input current
VIG = 5 V
35
6
60
7.5
2.1
2
100
8.5
2.7
-
µA
V
VIG
Input clamping voltage
Input turn-on threshold voltage
Input turn-off threshold voltage
II = 200 µA
VIG(ON)
VIG(OFF)
-
V
1.5
V
1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current.
July 1996
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
PROTECTION FUNCTIONS AND STATUS INDICATIONS
Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages.
FUNCTIONS
SYMBOL CONDITION
TRUTH TABLE
THRESHOLD
MIN. TYP. MAX. UNIT
INPUT
STATUS
OUTPUT
Normal on-state
1
1
1
0
1
0
0
0
0
0
0
0
Normal off-state
0
1
0
1
0
1
0
X
X
1
0
1
0
0
0
1
1
1
IL(OC)
Open circuit load1
Open circuit load
Over temperature2
Over temperature3
Short circuit load4
Short circuit load
Low supply voltage5
High supply voltage6
100
150
9
350
175
10.5
600
-
mA
˚C
V
Tj(TO)
VBL(TO)
12
VBG(TO)
VBG(LP)
3
4
5
V
V
40
45
50
For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care.
For status ‘0’ equals low, ‘1’ equals open or high.
For output switch ‘0’ equals off, ‘1’ equals on.
STATUS CHARACTERISTICS
Tmb = 25 ˚C.
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VSG
VSG
IS
Status clamping voltage
IS = 100 µA; VIG = 0 V
IS = 50 µA; VBG = 13 V; VIG = 5 V
VSG = 5 V
6
-
7
8
0.8
1
V
V
Status low voltage
0.7
0.1
5
Status leakage current
Status saturation current7
-
µA
mA
IS
VSS = 5 V; RS = 0 Ω; VBG = 13 V
-
-
Application information
RS
External pull-up resistor8
VSS = 5 V
-
100
-
kΩ
1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication
only. Typical hysteresis equals 140 mA. The thresholds are specified for supply voltage within the normal working range.
2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by
typically 10 ˚C.
3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low,
providing the device has not cooled below the reset temperature.
4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation.
5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V.
6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V.
7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting.
8 The pull-up resistor also protects the status pin during reverse battery conditions.
July 1996
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C; VBG = 13 V
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Inductive load turn-off
-VLG
Negative load voltage1
VIG = 0 V; IL = 7.5 A; tp = 300 µs
15
20
25
V
Short circuit load protection2 VIG = 5 V; RL ≤ 10 mΩ
td sc
IL
Response time
-
-
90
42
-
-
µs
A
Load current prior to turn-off
t < td sc
Overload protection3
IL(lim)
Load current limiting
VBL = 9 V; tp = 300 µs
28
40
52
A
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
During turn-on
to VIG = 5 V
to 10% VL
td on
Delay time
-
-
16
1
-
µs
V/µs
dV/dton
Rate of rise of load voltage
2.5
t on
Total switching time
to 90% VL
-
40
-
µs
During turn-off
to VIG = 0 V
to 90% VL
td off
Delay time
-
-
-
30
1.2
50
-
2.5
-
µs
V/µs
µs
dV/dtoff
t off
Rate of fall of load voltage
Total switching time
to 10% VL
CAPACITANCES
Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V
SYMBOL PARAMETER
CONDITIONS
VBG = 13 V
MIN. TYP. MAX. UNIT
Cig
Cbl
Csg
Input capacitance
Output capacitance
Status capacitance
-
-
-
15
415
11
20
580
15
pF
pF
pF
VBL = VBG = 13 V
VSG = 5 V
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes
high.
3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than VBL(TO), the device remains in
current limiting until the overtemperature protection operates.
July 1996
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
IL / A
BUK205-50Y
40
30
20
10
0
VBG / V = 13
VBL
IL
7
6
IB
II
B
I
TOPFET
HSS
VBG
L
IS
S
VLG
G
VSG
5
VIG
RS
IG
0
0.5
1
1.5
2
VBL / V
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.7. Typical on-state characteristics, Tj = 25 ˚C.
IL = f(VBL); parameter VBG; tp = 250 µs
RON / mOhm
BUK205-50Y
Normalised Power Derating
PD%
100
90
80
70
60
50
40
30
20
10
0
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
VBG / V
100
0
20
40
60
80
Tmb /
100
120
140
C
Fig.5. Normalised limiting power dissipation.
Fig.8. Typical on-state resistance, Tj = 25 ˚C.
RON = f(VBG); conditions: IL = 7.5 A; tp = 300 µs
PD% = 100⋅PD/PD(25 ˚C) = f(Tmb)
IL / A
BUK205-50Y
RON / mOhm
BUK205-50Y
20
15
10
5
150
100
50
VBG =
5 V
13 V
typ.
0
-60
-20
20
60
100
140
180
0
0
50
100
150
Tmb / C
Tmb / C
Fig.6. Limiting continuous on-state load current.
IL = f(Tmb); conditions: VIG = 5 V, VBG = 13 V
Fig.9. Typical on-state resistance, tp = 300 µs.
RON = f(Tj); parameter VBG; condition IL = 1.5 A
July 1996
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
BUK205-50Y
IL
BUK205-50Y
IG / mA
5
100 uA
10 uA
1 uA
CLAMPING
4
3
2
1
0
OPERATING
VIG = 3 V
100 nA
10 nA
1 nA
HIGH VOLTAGE
QUIESCENT
VIG = 0 V
40
0
20
60
-60
-20
20
60
Tj / C
100
140
180
10
30
50
VBG / V
Fig.10. Typical supply characteristics, 25 ˚C.
IG = f(VBG); parameter VIG
Fig.13. Typical off-state leakage current.
IL = f(Tj); conditions: VBL = 13 V = VBG; VIG = 0 V.
IG / mA
BUK205-50Y
II / uA
BUK205-50Y
3
2
1
0
200
150
100
50
VBG / V =
5
VBG / V =
7
13
50
13
0
-60
-20
20
60
Tj / C
100
140
180
0
2
4
VIG / V
6
8
Fig.11. Typical operating supply current.
IG = f(Tj); parameter VBG; condition VIG = 5 V
Fig.14. Typical input characteristics, Tj = 25 ˚C.
II = f(VIG); parameter VBG
II / uA
BUK205-50Y
IB
BUK205-50Y
100 uA
100
80
60
40
20
0
10 uA
1 uA
100 nA
10 nA
10
30
50
-60
-20
20
60
Tj / C
100
140
180
0
20
40
VBG / V
Fig.12. Typical supply quiescent current.
IB = f(Tj); condition VBG = 13 V, VIG = 0 V, VLG = 0 V
Fig.15. Typical input current, Tj = 25 ˚C.
II = f(VBG); condition VIG = 5 V
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
VIG / V
3.0
BUK205-50Y
IS
BUK205-50Y
10 uA
1 uA
2.5
VIG(ON)
2.0
100 nA
10 nA
VIG(OFF)
1.5
1.0
-60
-20
20
60
Tj / C
100
140
180
-60
-20
20
60
Tj / C
100
140
180
Fig.16. Typical input threshold voltages.
VIG = f(Tj); conditions VBG = 13 V, IL = 80 mA
Fig.19. Typical status leakage current.
IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V
IS / uA
BUK205-50Y
VIG / V
BUK205-50Y
500
400
300
200
100
0
8.0
7.5
7.0
6.5
-60
-20
20
60
Tj / C
100
140
180
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VSG / V
Fig.17. Typical input clamping voltage.
VIG = f(Tj); conditions II = 200 µA, VBG = 13 V
Fig.20. Typical status low characteristic, Tj = 25 ˚C.
IS = f(VSG); conditions VIG = 5 V, VBG = 13 V, IL = 0 A
IS / mA
BUK205-50Y
VSG / V
BUK205-50Y
20
15
10
5
1
0.8
0.6
0.4
0.2
0
0
0
2
4
6
8
10
-60
-20
20
60
Tj / C
100
140
180
VSG / V
Fig.18. Typical status characteristic, Tj = 25 ˚C.
IS = f(VSG); conditions VIG = VBG = 0 V
Fig.21. Typical status low voltage, VSG = f(Tj).
conditions IS = 50 µA, VIG = 5 V, VBG = 13 V, IL = 0 A
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
VBG(LP) / V
BUK205-50Y
VSG / V
8.0
BUK205-50Y
47
46
45
44
43
off
VIG / V =
5
7.5
7.0
6.5
0
on
-60
-20
20
60
Tj / C
100
140
180
-60
-20
20
60
Tj / C
100
140
180
Fig.22. Typical status clamping voltage, VSG = f(Tj).
parameter VIG; conditions IS = 100 µA, VBG = 13 V
Fig.25. Supply typical overvoltage thresholds.
VBG(LP) = f(Tj); conditions VIG = 5 V; IL = 80 mA
IL(OC) / mA
BUK205-50Y
VBG / V
BUK205-50Y
65
60
55
50
800
700
600
500
400
300
200
100
max.
IG =
1 mA
typ.
10 uA
min.
0
-50
0
50
100
150
200
-60
-20
20
60
Tj / C
100
140
180
Tmb / C
Fig.23. Low load current detection threshold.
IL(OC) = f(Tj); conditions VIG = 5 V; VBG = 13 V
Fig.26. Typical battery to ground clamping voltage.
VBG = f(Tj); parameter IG
VBG(TO) / V
BUK205-50Y
IL / A
BUK205-50Y
5
4
3
2
1
0
30
25
20
15
10
5
on
off
0
-25
-20
-15
-10
-5
0
-60
-20
20
60
Tj / C
100
140
180
VLG / V
Fig.24. Supply typical undervoltage thresholds.
VBG(TO) = f(Tj); conditions VIG = 3 V; IL = 80 mA
Fig.27. Typical negative load clamping characteristic.
IL = f(VLG); conditions VIG = 0 V, tp = 300 µs, 25 ˚C
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
IL / A
BUK205-50Y
VLG / V
-10
BUK205-50Y
0
-10
-20
-30
-40
IL =
-12
-14
1 mA
-16
7.5 A
-18
tp = 300 us
-20
-22
-1.2
-1
-0.8
-0.6
VLB / V
-0.4
-0.2
0
-60
-20
20
60
Tj / C
100
140
180
Fig.28. Typical negative load clamping voltage.
VLG = f(Tj); parameter IL; condition VIG = 0 V.
Fig.31. Typical reverse diode characteristic.
IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C
VBL / V
BUK205-50Y
IL =
Cbl
BUK205-50Y
65
60
55
50
10 nF
tp = 300 us
4 A
1 mA
1 nF
100 uA
100 pF
0
10
20
30
40
50
-60
-20
20
60
Tj / C
100
140
180
VBL / V
Fig.29. Typical battery to load clamping voltage.
VBL = f(Tj); parameter IL; condition IG = 5 mA.
Fig.32. Typical output capacitance. Tmb = 25 ˚C
Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V
IL / A
BUK205-50Y
current limiting
IG / mA
BUK205-50Y
60
50
40
30
20
10
0
0
-50
VBL(TO) typ.
tp =
50 us
i.e. before short
circuit load trip
300 us
-100
-150
-20
-10
VBG / V
0
-15
-5
0
5
10
15
20
25
VBL / V
Fig.30. Typical reverse battery characteristic.
IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C
Fig.33. Typical overload characteristic, Tmb = 25 ˚C.
IL = f(VBL); condition VBG = 13 V; parameter tp
July 1996
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
IL / A
60
BUK205-50Y
VBL(TO) / V
BUK205-50Y
15
14
13
12
11
10
9
50
typ.
40
30
20
10
0
8
7
6
5
-50
0
50
100
150
200
-60
-20
20
60
100
140
180
Tmb / C
Tmb / C
Fig.34. Typical overload current, VBL = 9 V.
IL = f(Tmb); conditions VBG = 13 V; tp = 300 µs
Fig.36. Typical short circuit load threshold voltage.
VBL(TO) = f(Tmb); condition VBG = 13 V
VBL(TO) / V
BUK205-50Y
Zth j-mb / (K/W)
BUK205-50Y
10
1
12
11
10
9
D =
0.5
0.2
0.1
0.1
0.05
p
t
t
p
P
D =
D
T
0.02
t
T
0
0.01
8
100n
1u
10u
100u
1m
10m 100m
1
10
0
10
20
30
40
VBG / V
t / s
Fig.35. Typical short circuit load threshold voltage.
VBL(TO) = f(VBG); condition Tmb = 25 ˚C
Fig.37. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.5 g
10.3 MAX
4.5 MAX
1.4 MAX
0.85 MAX
(x4)
0.5
Fig.38. SOT426
mounting base connected to centre pin (cropped short)
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
3.4
1.7
1.7
3.8
1.3 (x4)
Fig.39. SOT426
soldering pattern for surface mounting.
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Philips Semiconductors
Product specification
TOPFET high side switch
SMD version of BUK201-50Y
BUK205-50Y
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
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