Cell Phone Devices
'06-04
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C O N T E N T S
CONTENTS ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯3
SANYO Group Cell Phone Components ⋯⋯⋯⋯⋯⋯⋯⋯4
[SANYO Original technology]
Integrated System in Board⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯6
Integrated System in Board Application Products
(Standard Products) ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯8
SANYO's leading-edge technologies support
advances in portable electronic equipment.
Cell Phone Block Diagram Examples⋯⋯⋯⋯⋯⋯⋯⋯⋯10
Frame Transfer Full-Color CCD Sensors ⋯⋯⋯⋯⋯⋯⋯12
1/4-Type 3.2 MP CCD Camera Module for Cell Phones ⋯14
System-on-chip FM Radio ICs for Miniature Cell Phones⋯⋯⋯16
System-on-chip FM Radio ICs Easy Radio ICTM Series ⋯18
Sound Generator IC (MIDI)⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯20
Audio Compression IC ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯21
Terrestrial Digital One-Segment Chipset ⋯⋯⋯⋯⋯⋯⋯22
Cell Phone Video Drivers ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯22
NTSC/PAL Video Encoder ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯23
Earphone Mic Solutions⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯24
LED Driver ICs ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯26
New Charge Pump ICs ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯28
Motor Drivers for Cell Phones ⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯30
Amorphous Optical Sensors⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯32
Cell Phone Discrete Devices⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯34
SANYO's Lineup of High-Reliability Discrete Devices ⋯38
With the increasingly wide adoption of 3G and later cell phone infrastructure,
cell phones are featuring even more advanced and diverse functionality.
The speed with which multimedia functionality is being adopted is increasing,
and that trend is not limited to Japan, but is spreading worldwide.
SANYO has, for the first time in the industry,
adopted a 1/9-type CCD image sensor for cell phones.
SANYO is moving towards the megapixel age in camera cell phones,
starting with the chip size package (CSP).
Furthermore, SANYO continues to contribute to the development
of the cell phone market with efforts such as developing
SANYO's unique Integrated System in Board module technology
that achieves even higher densities and thinner form factors,
developing QVGA OLED displays,
the Easy Radio ICTM series that makes it easy
to include a radio receiver in portable equipment,
providing an extensive lineup of motor drivers for zoom,
autofocus, and other functions in cell phone cameras,
and developing power supply ICs for high pixel count CCDs.
■
Any and all SANYO products described or contained herein do not have
specifications that can handle applications that require extremely high levels of
reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative
nearest you before using any SANYO products described or contained herein in
such applications.
Higher pixel counts, further miniaturization, and lower power.
To respond to these market needs
and to provide new areas of added value
for our customers' products,
SANYO uses their subtle technological arts
to expand their lineup of diverse chipsets
and individual devices.
■
■
SANYO assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as
maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all SANYO products described or contained
herein.
Specifications of any and all SANYO products described or contained herein
stipulate the performance, characteristics, and functions of the described
products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and
test devices mounted in the customer's products or equipment.
■
■
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is
possible that these probabilistic failures could give rise to accidents or events
that could endanger human lives, that could give rise to smoke or fire, or that
could cause damage to other property. When designing equipment, adopt safety
measures so that these kinds of accidents or events cannot occur. Such
measures include but are not limited to protective circuits and error prevention
circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data, services)
described or contained herein are controlled under any of applicable local export
control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with
the above law.
■
■
No part of this publication may be reproduced or transmitted in any form or by
any means, electronic or mechanical, including photocopying and recording, or
any information storage or retrieval system, or otherwise, without the prior written
permission of SANYO Electric Co., Ltd.
Notes on Package Types and Naming
The package names used in this documentation are designed to indicate rough
classification of the packages used, and do not necessarily indicate the formal name of
each individual package.
Any and all information described or contained herein are subject to change
without notice due to product/technology improvement, etc. When designing
Refer to the delivery specifications document for the particular product for the package
dimensions figure and the formal name of the package.
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3
Here we introduce several technologies that SANYO has pushed to the limits.
SANYO Group Cell Phone Components
SANYO Group Cell Phone Components
Mega Pixel CCD
Camera Module
Small discrete
devices
Amorphous
Optical Sensor
Sound Generator
IC
FEM
Vibration Motor
POSCAP
FM Tuner IC
(Front End Module)
Die Electric Filter
ASM
(Antena Switch
Module)
SAW Filer
LED Driver
Charge Pump
DC/DC
&
Duplexer
LCD
(SANYO EPSON IMAGING
DEVICES CORPORATION)
Integrated
System in Board
SAW Duplexer
Battery
Speaker
RGB Chip LED
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5
SANYO Original technology
Module technologies that achieve high-density and thinner form factors
Integrated System in Board is a type of SiP (system in package) technology, and is a module technology that achieves high
densities and thinner form factors by using SANYO's unique substrate and mounting technologies. The Integrated System in
Board lineup consists of three types of process: ISB-Solo, ISB-Duo, and ISB-Quad. Which process is used is selected based on
the application.
Integrated System in Board
In addition to standard products, customer specified circuit blocks can also be converted to Integrated System in Board using an
optimal process, thus creating a new module device in a short time.
Integrated System in Board Process Lineup
Noise suppression effect (measured)
ISB-Solo
■Thickness of only 0.45 mm (0.65 mm if resistors are included) realizes excellent thermal radiation and
short development TAT
Reasons noise can be reduced by Integrated Sysytem in Board
■Optimal for SiP implementation of small-scale block that includes semi-power semiconductors.
■ Reduced wiring area due to implementation as miniature modules
■ Integration of noise reducing components
■ Supply voltage stabilization by using dedicated layers for power supply and ground
■ Application example (Cell phone charger circuit block)
■ Assembly structure examples
Integrated System in Board
Earlier mounting
Integration of noise
reducing components
Microcontroller
LSI
Wiring on board
Integrated System in Board
Top surface
Back surface
Integration of noise
reducing components
Dedicated power
supply/ground layer
4.45 × 4.45 × 0.65 mm3
SRAM
Mounting area
reduced by 80%
Noise is reduced
significantly
Surface scan using a field probe
ISB-Duo
Separate microcontroller
and SRAM
ISB-Duo (2-layer ISB)
■ Adopts unique SANYO-developed 0.2 mm thickness high-density substrate (2 layers)
Line 40 µm / Space 40 µm at 25 µm thickness copper foil,
Via diameter 100 µm / Via land diameter 150 µm
10 mm × 10 mm
Integrated System in
Microcontroller
■ Thickness of only 0.53 mm (0.73 mm if resistors are included) realizes high-density mounting
■ Optimal for SiP implementation of high-frequency (up to 10 GHz) blocks, blocks that require
Board stack structure
(high-density mounting)
Integration of noise
performance or EMC workarounds based on component placement/wiring pattern, and blocks that
require partial high-density mounting.
SRAM
reducing components
■ Application example (Clock detector block)
■ Assembly structure examples
Earlier mounting
Integrated System in Board
■ Evaluation results using a microcontroller and SRAM
(Surface probe method - 30 MHz to 1 GHz)
Integrated System in Board
Back surface
Top surface
Heat dissipation effect (simulation)
4.3 × 4.3 × 0.73 mm3
Mounting area
reduced by 58%
Typical BGA
97
89
81
73
65
57
49
41
33
25
Analysis conditions
MK
Maximum temperature
Chip heat generation
3 [W]
Z
92.7 [°C]
Chip size
4✕4✕0.3 [mm3]
5✕5✕0.03 [mm3]
25 [°C]
Y
X
ISB-Quad
Land size
Temperature
difference
Atmospheric temperature
■Adopts unique SANYO-developed 0.24 mm thickness high-density substrate (4 layers)
38.4°C
■Thickness of only 0.6 mm realizes high-density mounting
Ideal cooling of the solder lower
surface; 25 [°C]
Temperature
difference
Cooling conditions
Analysis model
■Optimal for SiP implementation of high-frequency (up to 10 GHz) blocks, blocks that require performance
or EMC workarounds based on component placement /wiring pattern, and subsystems that require high-
52.3°C
Integrated System Board package
1/4 model (since symmetrical)
Maximum
temperature
MK
density mounting.
■Chip-on-Board type
Z
54.3 [°C]
Y
X
Integrated System Board
that dissipates heat
■ Assembly structure examples
Passive components
(resistors and capacitors)
ISB-Duo
WS-CSP
Flip Chip
Maximum
temperature
MK
40.4 [°C]
Y
X
0.24 mm
ISB-Quad
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7
SANYO Original technology
Module technologies that achieve high-density and thinner form factors
Integrated System in Board Application
Products (Standard Products)
Here we introduce examples of ICs used for cell phones implemented as modules using Integrated System in Board.
NTSC/PAL encoder+Video driver+Audio codec+Speaker amplifier
New
Thin Form, Miniature 1 or 2 Channel DC/DC Converter Power Supplies
SR Series
LC822964
product
Featuring
These products combine a step-up DC/DC converter, n-channel power MOSFET, and Schottky barrier diode devices
in a single module. A switching step-up power supply can easily be implemented with just the addition of external
voltage setting resistor, coil, and capacitor components.
■Video Block
■One output system
Low-cost version specialized for cell phones
■Supports a wide variety of input data (ITU-R601/SQ)
■No output coupling capacitors required
■High performance
■Audio Block
■D/A converter signal-to-noise ratio: 98 dB (A
weighting), THD: 84 dB at 48 kHz
■A/D converter signal-to-noise ratio: 90 dB (A
weighting), THD: 80 dB at 48 kHz
■Programmable ALC/noise gate
■
Compared to discrete components with Integrated System in Board
■ Block Diagram (SR10010)
Integrated System in Board
Earlier mounting
Di
- Switching noise does not appear on the screen due to
the use of charge pump technology
■Stereo/monaural microphone interface
■Built-in headphone driver
TR
- Voltage sag does not occur
■Built-in 6th order low-pass filter: fc = 7.5 MHz
■Standby mode power consumption: 0 µA
■Low power consumption
■450 mW output (Vcc = 3.6 V, 1 kHz, THD = 1%)
■Power saving and standby functions
EXT
CE
VDD
FB
Integrated System in Board
IC
Back surface
Top surface
3
GND
3.4 × 3.4 × 0.65 mm
Mounting area
reduced by 35%
■ Block Diagram
■ Product lineup
Audio I/O block
Audio Codec
Oscillator
Withstand
voltage
Number of
channels
Type No.
Type
Size
Status
Microphone
amplifier
frequency
180 kHz
300 kHz
180 kHz
100 kHz
100 kHz
--------
SR10010
SR10020
SR10030
SR10110
SR10210
SR103XX
SR20010
1ch
Step-up type
20 V
20 V
ES samples/MP support
ES samples/MP support
ES samples/MP support
In volume production
In volume production
Under development
Speaker amplifier
LA74220C
ADC
ALC
I2S
Speaker
amplifier
30 V
20 V
20 V
--------
3.4 × 3.4 × 0.65 mm3
Volume
DAC
Heaphone
amplifier
Step-down
type
– power
supply type
--------
2ch
180 kHz
20 V
5.0 × 5.0 × 0.65 mm3
ES samples/MP support
TV output block
NTSC/PAL Encoder LC822962
Charge control circuit
10.0 × 10.0 = 100.0 mm2
+
Earlier mounted
Integrated system in Board
Timing
Generator
IIC I/F
Composit
video output
75 Ω Video Driver
LA73074C
CCIR601
NTSC/PAL
Video Encoder
ITU-R601/SQ
I/F
Regurator IC
3.0 × 3.0 = 9.0 mm2
Mounting area
reduced by 80%
Size: 109.0 mm2 → 19.80 mm2
Integrated System in Board
45 mm2 (6.0×7.5 mm2)
Current mounting area
84.88 mm2
Passive components
+
Sound I/O Block
TV Output Block
Sound I/O + TV output
Mounting area
can be
reduced by
over 50%
Audio codec
NTSC/PAL encoder
5.2×5.2×0.8 mm3
5.0×5.0×1.0 mm3
Speaker amplifier
Video driver
5.0×5.0×0.8 mm3
2.8×2.8×0.8 mm3
ISB-E17-0
4.4 5 × 4.45 = 19.80 mm2
2004
2002
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9
SANYO devices support megapixel class cameras and provide extensive functionality
Since the next generation of cell phones will include an even wider variety of functions than ever before, we expect that
dedicated multimedia processors and devices will be required.
SANYO provides a wide range of devices required by next generation cell phones, and can provide powerful support for your
cell phone development efforts.
Cell Phone Block Diagram Examples
P9
P26, P27
P16 to P19
P30, P31
Ultraminiature Package 2-Phase
Stepping Motor Drivers
P24
Integrated Audio/Video ICs
P23
LED Driver
NTSC/PAL Encoder
LC822961
Earphone/Microphone
Solutions
Under
development
1-Chip FM/AM Tuner ICs
LC822964
LV5202PL
New
product
Under
development
Integration of an NTSC/PAL
encoder, video drivers, an audio
codec, and a speaker amplifier IC
in a single package using ISB
technology. The mounting area can
be reduced by 50% or more.
13-ch 9-LED
LV24020
driver
New
S.T.F.D.
LC822963
LC822971
product
LB1906CL
LB1935CL
LB1935T
Under
development
New
product
(Single Transducer Full Duplex)
LV5203FN
Under
LV24010
development
13-ch 11-
LED driver
SANYO has developed a chip that
supports communication with just an
earphone.
■ Conversation is possible even without
a microphone
■ Achieves clearly audible conversation
even in noisy environments
(FM+RDS)
The cell phone display can easily
be connected to a TV for viewing.
These devices support a wide
variety of input data rates (ITU-
R601/SQ).
The LC822971 includes 16 Mbits of
SDRAM and allows the CPU to
draw graphics without concern for
the TV display rate.
Under
development
New
product
LV5204PL
LV24003
13-ch 11-LED
driver
1-ch Low-Saturation
(FM+source selector+
headphone amplifier)
New
product
Forward/Reverse Motor Driver
LV5213LP
New
product
3-ch RGB-LED
driver
LB1938T
LV24100
(FM+AM)
High-Efficiency Charge Pump Type
2-Phase Excitation Motor Driver
These revolutionary devices are
self-contained FM radio ICs that
require no external components.
New
product
Under
development
LB1801CL
LC410591
4 LEDs
P22
Constant Current Driving Motor Driver with
1-ch H Bridge and Thermal Shutdown Curcuit
Video Driver
Under
development
Headphone
LC410592
7 LEDs
New
LA73074CL
product
FM/AM tuner
LB1941CL
LB1941T
Charge pump
For main LCD backlights
SP
LED driver
2-ch stepping + 1-ch Constant Current
Forward/Reverse Motor Driver IC
P20
Audio
codec
MIC
LB8682CL
64 or 128-Voice Polyphony
Sound Generator IC Series
Sound
1.5-ch Constant Current
Forward/Reverse Motor Driver IC
Under
generator
New
product
LC823872
TV
NTSC/PAL
encoder
These ICs can generate up to 128
sounds at the same time and include
3D Audio functions.
development
LB8683CL
KEY
Audio
compression
decoder
Video driver
Auto Foucus Piezo Actuator
This is the latest sound generator IC
that even supports new melody formats
such as Mobile XMF, and provides the
highest functionality in the series as an
independent sound generator product.
Display
controller
Autofocus
Optical zoom
Under
development
LCD
display
LV8071LG
Motor driver
(Miniature series)
P12 to P15
Baseband processor
(CPU)
RF
Application processor
Sound Generator +
P20
Cell Phone 1/4-Type 3.2 MP CCD
Camera Chipset
Audio Compression IC
New
LC823553
product
LC99359(CCD)+
LC99812(DSP)
These ICs can generate up to 64
sounds at the same time and
include 3D Audio functions.
This is a combined product that
integrates ultralow-power MP3 and
AAC decoder functions, and is
optimal for use in cell phones for
true audio aficionados.
New
product
Megapixel CCD
camera module
The extensive depth of field provided
by these camera modules means the
user never has to worry about focus.
These camera modules are optimal for
camera cell phones that need to
provide easy and convenient imaging.
Memory
Graphic
memory
Sub-camera
CIF/VGA
Amorphous
optical
sensors
New
product
LC823501
Charge pump
Cell Phone 1/7-Type VGA
Resolution CCD Camera Chipset
This model corresponds to a low-price
version of the LC823553 with certain
functions removed, and is a combined
product that integrates an ultralow-
power MP3 decoder with a sound
generator IC that supports 64-voice
polyphony.
Flash
memory
P32, P33
P28, P29
LC99268(CCD)+
LC99809(DSP)
Power supply
control
Diversity antenna
Battery
These camera modules are optimal for
low-end camera cell phones. These
ultraminiature camera modules are so
small that they do not interfere with the
design of cell phone.
Integrated System in Board
External
memory
Terrestrial
P8, P9
broadcast
one-segment
OFDM
Frequency
conversion
P21
demodulator
MP3 and WMA Decoder IC
Cell Phone 1/9-Type CIF
Resolution CCD Camera Chipset
One-segment tuner
LC823231
By using dedicated circuits with a
hardwired structure to implement
the MP3 and WMA decode
functions, these ICs achieve
extremely low power levels.
LC99267(CCD)+
LC99807(DSP)
These modules are optimal for
sub-camera of video conferencing
cell phone products.
P22
Terrestrial Broadcast One-Segment
Frequency Conversion IC
Under
Terrestrial Broadcast One-Segment
MP3/AAC/AAC+Decoder
OFDM Demodulator IC
Under
development
Under
development
LC82335X
LC74112
LA8101
development
The adoption of diversity synthesis
technology makes stable reception
possible.
The adoption of direct conversion
technology obviates the need for a
SAW filter and supports miniaturization.
*: A separate coil is required for applications that include an AM radio
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High image quality, ultraminiature size, and low power makes these devices optimal for
use in cell phones
SANYO fabricates frame transfer (FT) CCD sensors using unique technologies with ultrafine design rules and provides them as
modules assembled using advanced leading-edge mounting technologies.
Frame Transfer Full-Color CCD Sensors
SANYO makes a point of providing fine and delicate semiconductor devices in forms that our customers will find approachable
and easy to use.
CCD drive circuit and image processing implemented in a single package
Frame Transfer CCD
Achieves the industry’s smallest optical size class by using the frame transfer CCD, which makes it possible to reduce
feature sizes while maintaining sensitivity.
Sensitivity was increased by adopting a simple single-layer gate gap structure and thin-film polysilicon.
Multifunction DSP chip
A charge pump type voltage step-up circuit that features minimal noise generation, and the supply voltages required for
system drive are generated efficiently with just the supply of a single +2.9 V power supply. This design is also effective at
achieving reduced power consumption.
SANYO implemented, in a single package, the timing generator circuit required for system drive and all the analog and
digital processing required to accept the CCD output by taking advantage of the SANYO CMOS analog/digital hybrid
process and MCP (multi-chip package) technologies.
FT-CCD
CMOS
IL-CCD
Device Density Comparison
PD
High voltage
Low voltage
Comparison of chip
sizes required to
Amplifier
PD
=Transfer
area
Roadmap
Low voltage
acquire the same
imaging device area
Imaging area
2004
2005
2006
Imaging area
High image quality
Dynamic range of
VGA motion picture
and 3.2-MP still picture
has expanded
LC99353
LC99359
Megapixel
CCD chipset
Storage area
output
High sensitivity
LC99810 1.0M LC99812 3.2M
Horizontal shift register
output
[storage 1/3 compression Type]
X direction register
Horizontal shift register
PD: Photo Diode
LC99268
LC99808
LC99268G
LC99809
30 fps
VGA CCD
chipset
Cross Section Comparison
High reliability
LC99268FL
Inproved stability
at high-temperature
(85 °C)
The FT CCD method uses
no elements that block the
entrance of light, and thus
they can capture light from
a wider range of incidence
angles.
Micro Lens
CIF CCD LC99267
chipset
Micro Lens
LC99807
Micro Lens
LC99117 Near infrared
P+ N+ N+
P+ N+ N+
Photo Diode
Coexistance
between
Near infrared
CCD chipset
Reducing the device
height is possible
Photo Diode
Photo Diode
near infrared
sensitivity and
color
P-Sub
LC99704
Comparison of Differences in Electronic Shutter Types
Sensitivity
Resolution
Dynamic Range
Motion
Frame Rate
Motion
Output
Motion
Digital
Digital
Digital
CCD sensor
CMOS sensor (1/4 VGA)
Chip Set
Color/B&W
Still
Motion
Still
Motion
High
LC99359
Color
Color
B&W
3.2M
VGA
CIF
VGA
VGA
CIF
Low
High
Normal
Wide
30
15
30
LC99268FL
LC99117
Wide
Very High
CCD Module Basic Structure Example
+2.9 V
Single power supply
CLK
Multifunction DSP
CCD module
In the 1.0-MP CCD, SANYO developed a new charge accumulation method.
Low moire, high sensitivity, and a high frame rate achieved by pixel addition during preview and spatial
filter processing.
Registers for picture arrangement
/Output mode/etc.
I2C bus
Charge pump
Power supply circuit
Newly developed
Imaging area
Storage area
Imaging area
CCD timing generator
AE/AWB controller
CCD driver
Imaging area
Compressed to 1/3 the number of lines by combining 3 pixels.
Mixing area
High sensitivity
Low moire
Horizontal shift
register
Output
amplifier
RGB/YUV output
HREF/VREF
Correlated double
AGC
8-bit
ADC
Digital color signal processor
Mixing area
sampling
Storage area
R+2G 2B+G
Analog front end processor
Storage area
Horizontal transfer
2R+G B+2G
R, G, and B are extracted by calculations
FT-CCD structure
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High image quality, ultraminiature size, and low power makes these devices
optimal for use in cell phone
The stable and reliable image quality provided by CCD image sensors. The simultaneity of an image in which the whole image
was captured at the same instant. A great depth of field that makes focusing unnecessary.
Even if the camera is only a cell phone cameras, the instant captured is, for the user, still an important instant in their life. This is
why SANYO is committed to providing products that make no compromises.
1/4-Type 3.2 MP CCD Camera Module
for Cell Phones
1/4-Type 3.2 MP CCD Chipset
LC99359+LC99812
Chipset Example
Great Depth of Field
This is a truly easy-to-use camera, since it has a wide range,
from close at hand to far away, over which subjects are in
focus, and thus it is difficult to accidentally create blurred out of
Iris driver
Near
Far
focus images.
Shutter driver
AF driver
LC99812(MCP)
Actuator
9 cm
7 m
I2C-BUS
MCK
Flash memory
CCD driver
Control
CCD
YUV output
Digital signal
processing
Analog signal
processing
6 m
HREF/VREF
PCLK
LC99359
Mechanical shutter
Optical Iris
Charge pump
power supply
circuit
3 or 4
Lens
Memory
When used in applications such as cell phones, this
2.9V single power supply
camera can easily take photographs such as the one
shown above, since the user can check a preview image
while shooting.
Introducing the Component Devices
3 m
3.2 MP Frame Transfer CCD Image Sensor
New
product
LC99359
■ Diagonal: 1/4 type
■ 3.2M pixels
Mechanical Shutter
■ Effective pixels: 2079 × 1554 (H × V)
■ Square pixels (1.8 × 1.8 µm2)
■ Color filters: Primary color (RGB) Bayer
■ Package: CSP
Smear does not occur during still
imaging when used in a module that
includes a mechanical shutter.
Module that includes a 2-stage (f/3.5
and f/7.0) optical aperture
High performance DSP for LC99359
New
product
LC99812
■ On-chip CCD driving timing generator and CCD driver
■ On-chip power supply circut for driving charge pump type CCD
■ AGC
Including a mechanical shutter
Not including a mechanical shutter
■ YUV and RGB output signal
■ Power saving mode
■ Built-in smear correction circuit, automatic dropout correction circuit
■ Shading correction
■ Noise control circuit
■ Timing generator to drive the mechanical shutter
■ Scaling and zoom functions
■ Timing generator for auto-focus control, auto-exposure control, autowhite balance control, and mechanical iris control
Modules that use this CCD Chipset
IGT99353M-SUB1 IGT99268GC-ST1
IGT99268C-ST1
IGT99267J-ST
IGT99267J-SUB
Photo
■ Supply voltage: 2.9 V (single-voltage operation)
1/4.5 1.0 MP
LC99353
1/7 VGA
1/7 VGA
1/9 CIF
1/9 CIF
■ Package: BGA128
Type
LC99268GFB
LC99809
LC99268FBX
LC99808
LC99267FB
LC99807
LC99267FB
LC99807
CCD sensor
LC99810
DSP
8✕8✕5.3 mm3 (Typ.)
VGA 30 fps
8✕8✕5.3 mm3 (Typ.)
VGA 15 fps
8.4✕10.3✕5.1 mm3 (Typ.) 8.4✕16.0✕5.1 mm3 (Typ.)
Size
Remark
Mechanical shutter
Connector on board
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14
15
An FM radio can be easily included in a limited space in a small product
An adjustment-free FM radio function can be included with absolutely no external components.
Since an ultraminiature 5.0 × 5.0 × 0.8 mm3 package is used, this device is extremely useful for including an FM radio function in
cell phones, PDAs, memory audio players, and other portable electronic equipment.
System-on-chip FM Radio ICs
for Miniature Cell Phones
FM Radio IC
Application Example
New
product
TM
Easy Radio IC LV24000 Series
Cell phone (1)
LV24000: FM radio function
The LV24000 family devices are FM radio ICs that require absolutely no external components.*
These devices include not only the FM radio function, but source selector, master volume control, tone controls,
headphone amplifier, and other functions in the same tiny 5.0 × 5.0 × 0.8 mm3 VQLP package.
These ICs are superb for adding new FM radio functionality in the small limited space available in existing products,
such as cell phones and other portable electronic equipment.
Cell phone (2)
LV24002: FM radio + source selector
+ headphone amplifier functions
Cellular
Phone
Cellular
Phone
Source
Selector
Volume
Head Amp
Source
Head Amp
Featuring
Volume
Selector
(Basic)
FM
■ Absolutely no external components required
■ Absolutely no adjustments required
■ Low IF frequency (110 kHz) adopted for improved
selectivity
■ Soft muting and high-blend stereo (3-stage
programmable)
■ Supports manual search, automatic search, and auto-
preset functions
FM
LV24000
LV24002
■ No FM detection discriminator required
■ Built-in adjacent channel interference function (114 and
190 kHz)
■ Supports reception in all regions worldwide (all Japanese,
European, and US bands can be received by changing
just the software)
■ New tuning technique
■ Master volume control
■ Ultrahigh sensitivity reception achieved by low-noise
mixer input circuit
■ Low-current standby mode obviates the need for a power
supply switch
■ FM: 76 to 108 MHz
■ Source selector function (LV24001)
■ Headphone amplifier (LV24002)
LV24002 Block diagram
■ RDS composite output
■ Three-wire bus interface adopted (clock, data, and NR-W)
■ Digital AFC function
LV24002
Power
Switch
Tuning
System
Quadrature
Oscillator
Stabilisator
Not only reducing the device prices
but also reducing the various costs during development
FM Ant.
Stereo
Decoder
Quadrature
Mixer
Selectivity
Deemphasis
Demodulator
■ Comparison with earlier products
Volume
& Tone
Control
Source
Selector
LINE-OUT L
LINE-OUT R
LINE-IN L
LINE-IN R
HEADPHONE L
HEADPHONE R
Headphone
Amplifier
Including All the Functions
✕ FM function (LV24020)
Beep
Generator
Digital
Interface
No external
components
requried
✕ FM+AM function (LV24100)
✕ FM+RDS function (LV24010)
✕ FM+amplifier function (LV24003)
NR_W
CLK
DATA
Earlier products
SANYO Easy Radio ICTM
LV24000
*: A separate coil is required for applications that include an AM radio
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16
17
An FM radio can be easily included in a limited space in a small product
System-on-chip FM Radio ICs
Easy Radio ICTM Series
This is what has changed since the earlier products!
Three points about the Easy Radio ICTM
Function and lineup
LV24000 LV24002 LV24020 LV24100 LV24010 LV24003
LV24200
Supported
No external
Miniature package
Ultraminiature
Supported
Supported
Supported
Supported
Supported
Supported
Supported
Supported
Supported
Supported
Supported
Supported
components required *
FM
High-sensitivity reception
Master Volume
Tone Control
Beep
Achieves clear audio
Makes cost reductions possible
5 × 5 × 0.8 mm3 size
Supported
Supported
Supported
Generator
Source Selector
Headphone
Amplifier
AM
Changing Total Costs
1. The analog circuit design technology (know-how based on long experience) that has been necessary up to now
Supported
4mW
at 32Ω
Supported
10mW
at 32Ω
is no longer required.
Function
&
Spec
2. Although even more time will be required to create the initialization block during software development, this block
will be able to correct product sample-to-sample variations, radically reducing the testing and adjustment during
the manufacturing process, and as a result, reduce total costs.
Supported
RDS
Demodulator
Supported
Furthermore, since software once developed can be reused in later products, this effort is not wasted.
I2C/SPI/
3 WIRE
uP I/F
3 wire
3 wire
3 wire
3 wire
3 wire
3 wire
Comparison of software development costs
Tuning
Icco
Soft
Soft
Soft
Soft
Soft
Soft
Self
18mA
22mA
14mA
14mA
14mA
20mA
14mA
Itemized comparison of software
development costs
Schedule
Package
MP
Available Available Available Available Available Available Available
Although the first initialization is required, this
can correct for product sample-to-sample
variations.
VQLP40
TSSOP24
Supported
Supported
Supported
Supported
Supported
Supported
Supported
Supported
T.B.D
T.B.D
T.B.D
T.B.D
T.B.D
Cost
Inspection
Adjustment
Inspection
Adjustment
difference
Initialize
Cost
difference
Inspection
Adjustment
Software
development
Volume
adjustment
and tone
control
Software
development
Volume
adjustment
and tone
control
Baseband processor
Application processor
Microcontroller, etc.
Inspection
Adjustment
FM radio
tuner IC
LV24003
No external
components required*
Headphone
program
Software
development
program
Simple
corrections
Software
development
Circuit
design
Frequency
conversion
tuning control
Frequency
conversion
tuning control
Circuit
design
SANYO Easy Radio IC Road Map
Circuit
design
Circuit
design
Under Mass production
I/O control
SANYO
I/O control
LV24XXX
Under Development
Other company
AM/FM/Power
low power
IC price
SANYO
IC price
SANYO
IC price
IC price
consumption
Under Planning
LV24003
Other company
Other company
Power output level up
+Source selector
-Headpone AMP
Initial product
Follow-on product
LV24010
+RDS
LV24002
SANYO can provide sample software and algorithms to even further reduce the burden on software
developers.
LV24100
+AM
LV24020
Low power
consumption
LV24000
FM
*: A separate coil is required for applications that include an AM radio
2004
2005
2006
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18
19
Support for 24 hours of playback
Sound Generator IC (MIDI)
Audio Compression IC
SANYO has developed ICs that, in addition to support for even more sounds, also include new
functions such as support for new standard melody formats and 3D audio.
Although previous audio playback periods have been largely limited to 3 to 5 hours, it is now possible
to achieve playing times of 24 hours or longer by adopting SANYO audio compression ICs.
MP3/WMA Decoder
LC823231
Featuring
Integrates 128-voice polyphony + PCM, 3D surround, 3D positioning* and Mobile XMF support
New
product
LC823872
Featuring
■ Ultralow power (MP3: 10 mW, WMA: 15 mW)
■ Supported formats
- MPEG1, MPEG2, MPEG2.5 (all sampling frequencies, all bit rates)
- WMA
■ Digital volume and tone control circuits
■ Digital equalizer and audio leakage prevention functions (D/A converter based)
■ ∆∑D/A converter and class D amplifier
■ PCM I/O interface
■ Capable of generating up to 128-voice polyphony in a full PCM sound generator
128 GM sounds + 47 drum sets + 32 sound effects sounds (conforms to GM1)
■ Includes a 3D surround function and a 3D positioning* function that allows the specification of positioning information
that positions the generated sound at an arbitrary position in three-dimensional space.
■ Supports not only the Mobile XMF new melody format but also a variety of other formats
■ User Customized Sound function that allows the user to register arbitrary sounds
■ Supports up to four songs worth of MIDI data and can play up to four channels of ADPCM (PCM) data at the same time
■ Includes a 4-band parametric equalizer that can provide optimal equalization for the speakers used
■ Supports karaoke and Java applications: JSR135, JSR2348. Supports special effects such as pitch bend, vibrato, delay,
reverb, chorus, Doppler, and compression.
■ Sleep mode
■ Crystal oscillator frequency: 16.9344 MHz (44.1 kHz × 384)
■ Sampling frequencies other than 44.1 kHz supported with built-in PLL circuit
■ Supply voltage: internal 1.5 V, I/O 1.8 to 2.8 V
■ Package: FBGA64 (5×5×1.2 mm)
Integrates 64-voice polyphony + PCM, 3D surround, 3D positioning, Mobile XMF support and MP3/AAC decoding
New
product
Single-Chip Audio
LC823553
Under
development
LC82335X
Featuring
■ Capable of generating up to 64-voice polyphony in a full PCM sound generator (conforms to GM1)
■ Includes a 3D surround function and a 3D positioning* function that allows the specification of positioning information that
positions the generated sound at an arbitrary position in three-dimensional space.
■ Supports not only the Mobile XMF new melody format but also a variety of other formats
■ User Customized Sound function that allows the user to register arbitrary sounds
■ Supports up to four songs worth of MIDI data and can play up to four channels of ADPCM (PCM) data at the same time
■ Includes a 4-band parametric equalizer that can provide optimal equalization for the speakers used
■ Supports karaoke and Java applications: JSR135, JSR2348
The LC82335X ICs support MP3, AAC, and AAC+.
By implementing the MP3, AAC, and AAC+ decoding functions in a hardwired structure, these ICs achieve an
ultralow power consumption that would be impossible in a DSP based structure.
■ Hardwired MP3, hardwired AAC, and hardwired
AAC+.
■ Ultralow power consumption: 10 mW
■ Buffer size: 10 KB
■ Includes an MP3 and AAC decoder function. The industry’s lowest power consumption: 8.5 mW for both MP3 and AAC
■ Built-in 8-band graphic equalizer
■ Built-in YY filter
■ SD interface
■ ARM7TDMI
■ Supply voltage: internal 1.8/1.3 V, I/O 2.85 V
■ Package: WL-CSP64 (6.1×6.1×0.9 mm3)
MP3
hard
wired
ARM7TDMI
decoder
YY filter
surround
AAC
hard
Stereo
output
Integrates 64-voice polyphony + PCM, 3D surround and MP3/AAC decoding
EMT
SIO
ROM
RAM
wired
Host
CPU
New
product
decoder
LC823501
+
AAC
hard
Featuring
wired
decoder
■ Capable of generating up to 64-voice polyphony in a full PCM sound generator (conforms to GM1)
■ Integrated 3D surround function that creates a rich feeling of spaciousness
DP
buffer
Input
buffer
■ Includes an MP3 decoder function. The industry’s lowest power consumption: 8.5 mW for MP3
■ User Customized Sound function that allows the user to register arbitrary sounds
■ Supports up to four songs worth of MIDI data and can play up to four channels of ADPCM (PCM) data at the same time
■ Includes a 4-band parametric equalizer that can provide optimal equalization for the speakers used
■ Supports karaoke and Java applications: JSR135
PLL
NAND
controller
SD I/F
NAND
flash
SD card
*: 3D positioning function
■ Supply voltage: internal 1.8/1.3 V, I/O 2.85 V
■ Package: PFBGA89 (6.0×6.0×0.8 mm3)
Function that can create a realistic
impression of space even from cell
phones that cannot provide an
adequate speaker separation.
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20
21
Terrestrial Digital One-Segment Chipset
NTSC/PAL Video Encoder
Miniature reception modules with low power consumption that achieve stable reception under rapidly changing
conditions are required for cell phones and other portable terminals. SANYO has established independently
developed diversity synthesis technology and the industry’s first direct conversion technology that together meet
these requirements.
This IC makes it possible to display the cell phone’s LCD screen contents or image data that was taken
with the camera and is stored in the camera’s memory on a TV (video input).
LNA
ODFM demodulation LSI (LC74112)
A/D
Frequency conversion (LA8101)
LPF
Application
processor
LCD
Baseband
processor
π/2
A/D
A/D
A/D
LPF
UHF Ant.
E
F
C
MPEG-TS
output
LC822961
LPF
LNA
Memory
π/2
LC822971
LPF
LC822961
equivalent
Frame
memory
Flash
memory
PLL
OSC
Direct conversion technology adopted
Diversity synthesis technology adopted
→ Makes stable reception possible
→ No SAW filter is required, making
further miniaturization possible
NTSC/PAL Encoder
Due to the adoption of direct conversion technology
Large external components such as a SAW filter are not required
Image cancellation using analog circuits is no longer required, and at the same
time as reducing the size of the circuit and the power consumption, circuit performance
does not degrade over time or due to temperature fluctuations.
LC822961
LC822963
New
product
Converts base band processor generated video and provides other functions for TV output.
■ Miniature package (CSP42: 3.3 × 3.78 mm2)
■ 10-bit D/A converter with built-in 75Ω driver
■ Supports a wide variety of input data rates (ITU-R601/SQ)
This approach achieves antenna diversity,
which is effective at improving reception performance.
■ The LC822963 is an MCP package version of the LC822961 audio operational amplifier (LA6358N).
■ Application examples: TV games, video players
NTSC/PAL Encoder with On-Chip DRAM
Cell Phone Video Drivers
Under
development
LC822971
Data written to memory can be continuously output to a TV without being sequentially updated using the internal
frame memory.
Once the data has been written it can be displayed with essentially no load on the microcontroller.
■ On-chip 16 Mbit SDRAM. Allows drawing by the CPU without concern for the TV display rate.
■ Rotation processing (at write), enlargement processing (at display)
Video driver
New
product
LA73074CL
■ No output coupling capacitors required
■ Low-voltage drive (2.7 to 3.6 V)
■ Voltage sag does not occur
■ Built-in sixth-order low-pass filter (fc = 7.5 MHz)
■ Standby mode power consumption: 0 µA
■ The amplifier gain can be selected (6, 9, or 12 dB)
■ The NTSC/PAL encoder block is the same as that in the LC822961.
■ Application examples: Photograph album shows, business presentation tools
Low:
6dB
16-Mbit SDRAM (MCP)
High: 9dB
Open: 12dB
PLL
VCC
10
GAIN_CTL
2
CLK
SEL
SDRAM
controller
VGA
Size
V_OUT
D/A converter and
75 Ω driver
V_IN
from
DAC
(5 Mbits)
Video
Driver
Composite
video output
9
3
CLAMP
LPF
AMP
75 Ω
DAC
Power
Save
1
5
A-GND
GND
Minus Voltage
Generator
CTL bus
Data
DRAM
H/V filter
H/V ccalar
Display writer
writer
NTSC/PAL
video encoder
CPU I/F
6
7
8
4
Timing
generator
VCC_N
CLK_OUT
ND1
P_SAV_CTL
Low:
Active
LC822961
High: Stanby
Open: Stanby
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22
23
Developing a chip that can support phone conversations with just an earphone.
Under development
Earphone Mic Solutions
What is an earphone mic?
Wind sounds
SANYO is developing a chip that can support phone conversations
with just an earphone.
Higher audio
quality
Conversation is possible without taking off your earphones.
Bone conduction
Noise is reduced
Earphone mic
microphones
■ STFD (single transduce full duplex) technology makes a separate microphone unnecessary!
Increased flexibility in end product design
■
■
■
Phone conversions are possible even in crowds or noisy environments
Since the sound is picked up directly in the ear, wind and other sounds can be reduced.
Better audio quality than bone conduction microphones
Since an even clearer voice sound is possible, it is easy to identify the speaker.
New applications in various other wireless markets
Phone conversations are possible without removing one’s earphones when listening to music.
Hands free
There are also
new applications
Single Transducer Full Duplex
Resistant to noise
S.T.F.D.
Tympanic
Development roadmap
The headphone diaphragm
catches the weak audio
signal emitted from
the tympanic
First generation
Second generation
For business equipment
For PC peripherals
For portable accessories
Evaluation board verification
STFD function confirmation
For portable equipment
For wireless equipment
Diaphragm
Simultaneous transmission and
reception at a single diaphragm
Tympanic
Vibrations in the air
Vocalization
Lower power consumption
Higher functionality
To the
circuit
Integration
Transmission
Reception
Added functionality
• Noise canceler
• Speach speed conversion
• Hands free
Functions
• STFD
• Volume
Signal conversion using a DSP.
Signal transmission while maintaining clarity.
STDF evaluation board
Vibrations in the air
2005
2006
2007
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24
25
SANYO provides LED drivers that support automatic gradation production using full-color LEDs and can provide high-capacity
outputs up to a total of 500 mA using a switching power supply technique as well as white LEDs for backlights using a charge
pump method optimal for white LEDs.
LED Driver ICs
Drivers for 3-color LEDs that have an external control interface
Under
development
Switching power supply LED drivers
LV5213PL
These are LED drivers that can provide a high-capacity output up to a total of 500 mA using a switching power supply
technique, and cover applications such as main LCD backlights, sub-LCD backlights, camera flash systems, and full-
color LED indicators.
■ 3-channel 1-lamp LED driver (Singe RGB: 1)
■ Switching power supply technique: Can provide up to 80 mA output
■ Three-wire serial bus support
■ Ultraminiature package: VCT16 (2.6×2.6×0.85 mm3)
Gradation production using full-color LEDs is also supported (automatic).
Under
Switching
80 mA
3-wire
Serial
1 RGB
AUTO
development
LV5202PL
1 LED
3ch
Automatic blinking
(color changing) in
hardware is possible
■ 13-channel 9-lamp LED driver
(Main LED: 4, Sub RGB: 1, Lighting LED: 3, Singe RGB:1)
■ Supports 3-color backlights appropriate for simply monochrome
MAIN
3ch
displays for sub-displays.
■ Switching power supply technique: Can provide up to 500 mA output
■ Supports I2C bus
■ Ultraminiature package:QFN32 (4.0×4.0×1.0 mm3)
SUB
Charge pump type LED driver
This is a 4-lamp white LED driver for main LCD backlights that allows the brightness to be adjusted with an
external PWM input.
Generates the optimal voltages for white LEDs with a high-efficiency charge pump type step-up circuit.
Can provide a constant current output up to a total of 140 mA.
CAMERA
Switching
500 mA
2 RGB
AUTO
I2C
9 LEDs
Under
development
LC410591
■ 4 channels (Main LED:4 )
■ Charge pump power supply technique: Can provide up to 104 mA output
■ Supports brightness adjustment over a serial data input (10 steps)
■ Power saving mode
■ Soft start function
■ Input voltage 2.7 to 5.5 V
■ Ultraminiature package:VQFN16 (4.0×4.0×0.85 mm3)
Under
development
LV5203FN
■ 13-channel 11-lamp LED driver
(Main LED: 4, Sub LED: 2, Lighting LED: 4, Singe RGB: 1)
■ Switching power supply technique: Can provide up to 500 mA output
■ Three-wire serial bus support
■ Ultraminiature package:VQFN32 (5.0×5.0×0.85 mm3)
Charge pump
104 mA
3-wire
Serial
4 LEDs
Switching
500 mA
3-wire
Serial
1 RGB
AUTO
11 LEDs
Under
development
LC410592
■ Two groups for a total of 7 channels (Main LED: 4, Sub LED: 3)
■ Charge pump power supply technique: Can provide up to 140 mA output
■ Supports brightness adjustment using an external PWM input (input for each group)
■ Automatic switching between 1× and −0.5× step-up modes
■ Power saving mode
Under
development
LV5204PL
■ 13-channel 11-lamp LED driver
(Main LED: 4, Sub LED: 2, Lighting LED: 4, Singe RGB: 1)
■ Switching power supply technique: Can provide up to 500 mA output
■ Supports I2C bus
■ Ultraminiature package:VQLP32 (4.0×4.0×0.85 mm3)
■ Soft start function
■ Input voltage 2.7 to 5.5 V
■ Ultraminiature package:VQFN16 (4.0×4.0×0.85 mm3)
VQLP32
Switching
1 RGB
Charge pump
140 mA
PWM
Control
I2C
11 LEDs
7 LEDs
500 mA
AUTO
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26
27
Support for High-Resolution CCDs
This IC is based on a unique SANYO idea and is a high-efficiency charge pump IC that was newly-developed taking advantage
of CMOS technologies that fuse SANYO's circuit and process technologies. This IC is optimal for power supplies in portable
electronic equipment.
This IC introduces technologies that completely overturn the previous common knowledge that although charge pump circuits
were low noise, they suffered from poor efficiency.
New Charge Pump ICs
Features of New Charge Pump ICs
Charge pump power supply application
The ability to provide a stepped-up voltage with low noise makes this circuit optimal for
embedding in modules.
CCD image sensors require a high drive voltage of 10 to 20 V. This 10 to 20 V level is created by stepping up the 3 V
power supply level.
Since conventional charge pump voltage step-up technologies suffer from increased power loss when used to step up
the original voltage by over three times, their use in cell phones was problematic.
SANYO has, however, discovered a way of fusing their high level analog circuit and device technologies to overcome
this problem.
This new charge pump technology can step up a regulated voltage by a factor of three or higher with an efficiency as
high as 70%. Furthermore it can provide an output current of several tens of mA.
SANYO was the first in the industry to develop a high-performance charge pump.
This new charge pump technology can provide both positive and negative stepped up levels, can be combined into
multiple stages, and can provide multiple output levels. Thus this circuit technology is optimal for use in future camera
cell phones that include a megapixel-class CCD image sensor.
+15 V(10 mA)
-8 V(5 mA)
Charge pump
Charge pump
Charge pump
CCD
LTPS
3 V
3 V
3V
+7 V(500 µA)
-8 V(5 mA)
White LED
+4.5 V(100 mA)
CCD Power Supply IC for Camera Cell Phones
■ High efficiency
(Prior to the regulator: 90 to 95 %)
■ Coilless, low noise
■ Supports high output current designs
■ The only external components are thin form
capacitors (no coils or diodes required)
■ Can provide both positive and negative
stepped-up outputs
■ Supports fine step-up step sizes
+0.5 × n × VDD
-0.5 × n × VDD (n: integer)
■ Optimal for use as the power supply in
portable equipment
Under
IPBlock diagram
development
LV5711FN
■ Regulates a 3.3 to 4.5 V battery level
to 3.1 V and steps up that level 3×
and 6× using a charge pump, to
provide the two regulated power
supply levels required by the CCD
image sensor.
Block diagram
Clock generator & driver
Clock
3.3 to 4.5 V
C1
C2
Cn
Cn+1
V
DD
VBAT2
VBAT1
4
8
1 µF
OUT2
VSS1
OUT1
■
VH = +15.0 V
VL = -8 V
7
6
5
VO
V
V
OUT
Regulator
IN
Charge pump
1 µF
■
1 µF
3.1 V / 100 mA
LDO
3.1 V / 100 mA
LDO
VBAT3
VBAT4
10
13
■ Two independent charge pump
systems are provided for VH and VL
■ Built-in regulators for the analog
system power supply, vertical driver
system, and DSP core
VDD1,2,3,4
VDD1
39
32
OUT3
11
3.1 V / 1 mA
1 µF
VDD2
VSS2
OUT4
9
40
38
41
37
42
36
43
35
44
0.22 µF
1.8 V / 100 mA
C11A
C11B
12
26
LDO
1µF
(VDD✕1)
FVREF
0.1 µF
Sample characteristics of a high-current
VDD3 17
0.22 µF
Output voltages from positive and negative step-up operation
C12A
C12B
charge pump (single supply voltage→±3×)
(VDD✕2)
19
VSS4
✕Plus step-up
✕Minus step-up
Dependency of efficiency on the supply voltage
15
6 times
step up
circuit
0.22 µF
VSS5
Positive step-up voltage vs. output current
Negative step-up voltage vs. output current
C13A
C13B
C14A
C14B
90
80
70
60
50
40
30
20
10
0
12
-12
-10
-8
Bandgap
voltage
reference
1.19 V
(VDD✕3)
20
0.47 µF
C21A
(VDD✕1)
0.22 µF
18
3.7 V
10
8
3.7 V
3.3 V
C21B
(VDD✕4)
3.3 V
2.9 V
-3 times
step up
circuit
21
0.47 µF
C22A
2.9 V
(VDD✕2)
16
0.22 µF
C15A
C22B
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
(VDD✕5)
34
33
22
0.47 µF
C15B
VSS3
6
-6
C23A
Timing
generator
(VDD✕3)
14
C23B
4
-4
3
1
VSS6
VL_C24
(VDD✕3)
23
24
VH_C16
1 µF
VDD=3.3V
IOUT=-50 mA
IOUT=50 mA
(VDD✕6)
Sequence
generator
2
-2
1 µF
VL_C25
At IOUT=50 mA, efficiency=80.6%
At IOUT=100 mA, efficiency=72.0%
Maximum efficiency: 80.8%
At VDD=2.9 V, VPP=7.78 V
At VDD=3.3 V, VPP=9.03 V
At VDD=3.7 V, VPP=10.26 V
At VDD=2.9 V, Vbb=-7.44 V
At VDD=3.3 V, Vbb=-8.71 V
At VDD=3.7 V, Vbb=-9.96 V
-8-V Reg
1 µF
VH_C17
NC
15-V Reg
2
STBY 30
0
-0
1 µF
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
1.2-MHz
Oscillator
27
Output current, IOUT (mA)
1/2 Divider
Output current, IOUT (mA)
Output current, IOUT (mA)
29
SLEEP
31
28
25
EN
VDD4
VSS7
* Values in parentheses are actual
applied voltages to the capacitor.
Note: Short OUT1 to VDD1 through VDD4.
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28
29
Ultraminiature Package
Demand for camera cell phones is increasing rapidly not only in Japan, but in most markets around the world as well.
While compact, high image quality cameras are in demand in the cell phone market, there are also increasing desires for high-
level camera functions such as mechanical shutters and autofocus.
SANYO developed even further their motor driver technologies nurtured through years of experience in the digital camera field
and provides these technologies for use in camera cell phones as ultraminiature package motor drivers that require few external
components.
Motor Drivers for Cell Phones
Motor Driver ICs for Cell Phones
Miniature Driver Series
■ Camera Cell Phone Driver Lineup
Two-phase excitation motor drivers
New
product
LB1801CL
For autofocus and zoom
■ Supports an FR position
detection output
■ Low saturation voltage output
■ Two-phase excitation driver
■ Low-voltage drive
Drive is possible from 2.2 V
Compact Package
Block diagram
Shutter
Iris diaphragm
Focus
Zoom
VCC
1 µF
LB1941T/CL
Constant Current
LB1938T/CL
800 mA
Stepping Motor
OUT1
OUT2
IN1
IN2
Voice Coil Motor
New product
LB8681CL
Constant Current 1.5 ch
12-pin 2.8 mm Package
New product
New product
LB1801CL
Comp.IN
LB1801CL
Comp.IN
Stepping Motor
(2-phase excitation)
ENA
INM
Under development
LB8682PL
Constant Current 1 ch + 2 ch
LB8686PL
OUT3
OUT4
1.5 ch ✕ 2
Stepping Motor
LB1800CL
LB1800CL
Comp.IN
Comp.IN
LB1800CL
LB1800CL
(1-2-phase excitation)
R
Comp.IN
L
GND
1.3 V
Under development
PIEZO
(SIDM)
LV8071LG
COMP
BIAS
Constant current driver with H bridge × 1.5 ch
LB8683CL
Under
development
For Shutter and Iris Diaphragm System
Shutter
Iris
Block diagram
OUT1
OUT2
OUT3
VCC
Lens Driver IC for Cell Phones
0.2 V
LB1906CL
+
Reference
voltage
circuit
IN1
–
Constant
current
control amplifier
For Auto-Focus Motors
IN2
Saturated control and 1-2 phase excitation drivers
Block diagram
CPU
IN3
VCC
1
µF
Thermal protection circuit
GND
60 kΩ
Stepping motor
OUT1
RFS
RFG
RF
IN1
80 kΩ
OUT2
Auto Foucus Piezo actuator
LV8071LG
60 kΩ
IN2
Under
development
80 kΩ
Block diagram
For Auto-Focus Motors
60 kΩ
Focus
IN3
80 kΩ
OUT3
OUT4
PWM H bridge
60 kΩ
IN4
Sequence circuit
80 kΩ
GND
ENA
STEP
M1
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30
31
Achieving Low Power and Superb Viewability
These devices are a type of photodiode that can detect light with about the same sensitivity as the human eye. Since these
devices flexibly support a wide range of end product designs and sizes, they can be used to control the LCD backlight and
button lamps in cell phones to implement power saving automatic brightness adjustment
Amorphous Optical Sensors
Amorphous Silicon Solar Cells
Amorphous Optical Sensors
Amorphous Optical Sensor Structure
Like amorphous silicon solar cells, amorphous optical
sensor use the photovoltaic effect in semiconductors.
These devices are a type of photodiode that can detect the presence/absence of ambient light, or the intensity of ambient light.
Light
Amorphous optical sensor spectral sensitivity
Illumination-dependent characteristics of ISC
Amorphous optical sensor pattern examples
When light hits a semiconductor, electrons and holes
are created, the electrons diffuse in the n-type
semiconductor, and the holes diffuse in the p-type
semiconductor. As a result, a current will flow when the
two semiconductor types are connected externally.
Visible wavelength amorphous optical sensor
Human visual sensitivity
(+) Anode
(for color illuminator): 1 to 10 kLx
Measured at FL
Transparent electrode
at SS (Solar Simulator)
: 10 to 10k Lx
Single-crystal silicon optical sensors
+
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
+
+
+
+
+
p
+
+
+
+
2.1
+
+
+
[AM-30-26]
+
1
+
+
+
+
+
i
+
0.5
+
0.88
0.84
(-) Cathode
n
Metallic electrode
Electron
Electron hole
[AM-30-26]
400 500
600 700 800
900 1000
1
10
100
1,000 10,000 100,000
Illumination [Lux]
Wavelength [nm]
+
High sensitivity in the visible region
Flexible pattern geometries and sizes
The output current is proportional
to the illumination
The human eye is sensitive to light with
wavelengths from about 400 nm to about 700 nm.
Since these amorphous optical sensors have
sensitivity to essentially the same wavelengths,
they provide sensing that is close to that of the
human eye.
These devices support designs with sizes and
shapes that correspond to the target application.
Since the output current changes proportionally to
the light striking the sensor, these devices provide
precise detection.
Amorphous Optical Sensor Circuit Examples
With an operational amplifier
Without an operational amplifier
Amorphous Optical Sensor Application Examples
Automatic adjustment of LCD backlight and operating panel buttons
3V
These sensors can be used to sense the ambient
Cell phone with built-in optical sensor
C
R
illumination level and automatically turn off these lamps in
bright operating environments. This reduces unnecessary
power consumption and creates LCD screen display that is
easy to see whatever the ambient lighting.
Amorphous
Optical Sensor
(AM-30-26)
A
Amorphous
Optical Sensor
(AM-30-26)
Bright environments
Dark environments
LCD backlight OFF
LCD backlight ON
LCD backlight ON
■ Increased operating time for portable electronic
equipment due to reduced power consumption!
■ LCD backlight level automatically adjusted to just the
right level for viewing according to the ambient
illumination level
The current output from the amorphous optical sensor is
converted to a voltage, and signal processing is applied to that
voltage.
The amorphous optical sensor is connected to a resistor and the
voltage is input directly to an A/D converter for discrimination.
About 300Lx
About 3Lx
Button lamps OFF
5 to 20mA
Button lamps OFF
55 to 70mA
Button lamps ON
95 to 110mA
Normally, an operational amplifier is used for linear amplification.
Cell phone without built-in optical sensor
Amorphous Optical Sensor Product Lineup
Bright environments
Dark environments
Bright environments
Dark environments
Type No.
External dimensions (mm)
Short-circuit current (ISC, typical)
Dark current (VR = 50 mV) MAX.
10 pA
LCD backlight ON
LCD backlight ON
LCD backlight ON
2.1 × 2.0 mm2
(glass thickness: 0.4 mm)
AM-30-26
1.2 A *1
LCD backlight
Unnecessary power
consumption occurs
Unnecessary power
consumption occurs
Automatic brightness adjustment
OFF
ON
*1 : at 1000Lux, Fluorescent Light for color illuminator
Button lamps
Contact your SANYO sales representative for details on these products
Button lamps ON
95 to 110mA
Button lamps ON
95 to 110mA
Button lamps ON
95 to 110mA
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32
33
Handling More Data Even Faster. Supporting Needs for Higher Performance with
Peripheral Components
SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number
of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets.
SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data
due to the inclusion of high pixel count cameras in this equipment.
SANYO's Lineup of High-Reliability
Discrete Devices
Ultralow on-resistance MOS devices for power management
Low and medium output MOS device development roadmap
Ultralow on-resistance MOS device generation map
Devices for CCD camera module
Reduced on-resistance/reduced voltage drive
Ultrahigh-frequency transistors
Bipolar Transistor for LNA
Low noise, High gain transistors
(f =20 GHz)
T
SBFP405M, SBFP420M...etc.
Device
Device
1998
2000
2002
2004
2005
2006
Cell pitch
Design rule
EC3H02B, 2SC5538, 2SC5539...etc.
¥ Trench structure (T4) -> (T5)
¥ Increased speed and further
improved ultralow on-resistance
¥ Reduced voltage drive
(from 1.5 to 1.2 V)
¥ Shorter turnaround times
(fewer masks)
¥ Trench structure (T3/4) deployment
(T3: 10 million, T4: 16 million cells per
square inch)
¥ Shallow trench technology established
¥ High ESD resistance technology
established
100
90
80
70
60
50
40
30
20
10
0
High
10 µm
5 µm
3 µm
2.5 µm
1.8 µm
1.3 µm
performance
1.1 µm
0.8 µm
0.55 µm
0.35 µm
0.25 µm
0.18 µm
Schottky barrier diodes
EC2D01B, SB0203EJ...etc.
270
240
210
180
150
120
90
Low capacity
process
R
(on)
DS
15 mΩ
Miniaturization
MOSFET
MOSFET
¥ Deployment to miniature thin-form
products; VEC8, SCH6, ECSP
¥ Wireless package technology
ECH8, TSSOP-WL, FlipFET
Miniaturization
Bipolar transistor for VCO
Low phase noise transistors
EC3H02B, EC3H09B...etc.
T4: 16 million cells per
square inch)
GaAs MMIC products for antenna
switches and local switches
Low insertion loss MMIC /
High isolation MMIC
SPM3211, SPM3212,
SPM3215, SPM3218...etc.
¥ Lineup covering 12 to 200 V
¥ Low on-resistance process
established (T2 trench process)
¥ Higher power and lower cost
Differentiation
R
(on)
DS
Added functionality
ExPD
ExPD
3.2 mΩ
Wireless package
R
(on)
DS
R
(on)
DS
60
(on)
5.3 mΩ
R
2.8 mΩ
DS
¥ Built-in driver MOSFETs
¥ Trench low side
¥ Back gate switches for lithium
battery charging and discharging
¥ High side switches and condenser
microphones for cell phones
R
(on)
2.5 mΩ
DS
30
¥ Low Side
3.8 mΩ
Transistors for LCD backlight circuits
Multi Function
¥ Drivers (high voltage/
low voltage)
¥ PicoLogicTM
0
J5
T1
T2
T3
T4
T5
Precise interface control MOSFETs
5LN01S, 5LP01S
MCH6614(2 in 1)...etc.
High side switches
Low voltage
drive
V
=4V
GS
2.5V
1.8V
2003
2004
2005
2006
2007
[Year]
Devices for Li-ion batteries
1.5V
Complex devices
Ultralow on-resistance MOSFET series
ECH8601, FTD2017A...etc.
MCH5809, CPH5809(MOS + SBD)...etc.
Schottky barrier diodes
SBS804...etc.
Low VF/IR Schottky barrier diodes for power management
Power management switches
Ultralow on-resistance MOSFET series
VEC2301, SCH2602, ECH8603
MCH6307...etc.
V – I comparison data for earlier and low-V devices Schottky barrier diodes
Low V /I Schottky barrier diode development roadmap
F R
F
F
Junction FETs for ECM
Ultrathin package: VTFP
I
F
-V
F
(Comparison with earlier SANYO products)
Low forward voltage
10
New generation
Low V - Low I
F
R
TF218TH, TF208TH, TF202(SSFP)...etc.
High
New structure Schottky
barrier diode
Miniature thin-form
package
3rd Generation
Reduced by
performance
Low VF - high-density
sub + Ti barrier
0.2 V
Low VF - Low IR
2LnodwGV eneration
F+ Ti barrier
New Product
Barrier metal
inspection
1st Generation
SBD
Low IR - high-density
sub + MO barrier
150¡C
SBS010M
1.0
guaranteed
Wireless
Contributes to
SB10-015C
Parallel, Twin SBD
MOS + SBD
TR + SBD
Compound
product
Multi Function
Earlier Product
deployment
increased
efficiency,
miniaturization,
and thinner
form factors
0.1
15V 1A 0.4V
SCH
ECH
15V 2A 0.4V×2
30V 0.7A 0.55V
15V 1A 0.4V
15V 1A 0.4V
SOP-WL
PCP
CPH
MCPH
30V 1A 0.45V
LCD backlight ultralow saturation voltage transistors
4pin ECSP
0.01
Befor
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
[Year]
0
0.1
0.2
0.3
0.4
[V]
0.5
0.6
0.7
in end products!
V
F
Low saturation voltage transistor generation map
Ultralow saturation voltage transistor development roadmap
4th Generation
High-speed SW
MBIT-IV
160
140
120
100
80
High performance
3rd Generation
MBIT-III
Cell density
65Kcell/inch2
Ultra low saturation voltage
Narrow width of h
High switching speed
High performance
FE
R
(sat)
CE
140mΩ
2nd Generation
MBIT-II
Low cost
MBIT-IIs
(Single-layer
electrode)
Cell density
144cell/inch2
50%
down
High performance
Cell density
144cell/inch2
High performance/low cost
30%
down
High hFE support - ECSP¤
package
High voltage (80 V and over)
- High output support
1st Generation
MBIT
Low resistance
of collector layer
PicoTR surface mounting
package deployment
Support for hFE1 ranking
R (sat)
CE
70mΩ
60
MCPH, PCP, and TP leads
Package deployment -
High
Compound CPH deployment
40
performance
R
(sat)
CE
50mΩ
Very low saturation voltage
High switching speed
Small and high power package
30%
down
R (sat)
CE
35mΩ
20
Small
PCP
CPH
MCPH ECH SCH
ECSP
SOP-WL
2007
Before
1997
1998
1999
2000
2001
2002
2003
2004
2005
2006
[Year]
2002
2003
2004
2005
2006
h
FE
=100 to 400, Width=300
h
FE
=200 to 560, Width=360
h
=250 to 400, Width=150
FE
[Year]
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34
35
Handling More Data Even Faster. Supporting Needs for Higher Performance with
Peripheral Components
SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number
of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets.
SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data
due to the inclusion of high pixel count cameras in this equipment.
SANYO's Lineup of High-Reliability
Discrete Devices
0.8 GHz, 1.5 GHz
Digital Cell Phone
FETs for Cell phone ECM
Inner antenna
Low-noise amplifier
Thin-form package technology
Gold loop and new software (M loop)
Gold loop and new software
High signal-to-noise ratio technology
OSC(NPN BiP)
EC3H09B, EC3H07B
SBFP420B
Antenna switches( GaAs MMIC)
SPM3212
SPM3215
JFET noise component
Buffer amplifiers
EC3H10B
FS303
Local switches
SPM3212
SPM3220
SPM3220
SPM3226
Condenser microphone JFET structure
Filter switches
FS304
Whip antenna
SPM3226
(GaAs MMIC)
SPM3212
SPM3220
SPM3226
Drain
Drain pad
JFET
Protective
diode static
voltage
Power amplifier
Source pad
workaround
φ20µm
Gold loop
Gate
Earlier software: the chip and wire
were shorted together
Antenna switch
Polysilicon resistor
transient characteristics
workaround
Gate sub
Baseband
logic
Source
WB loop height: 150 m maximum → reduced to 100 m maximum
The high resistance polysilicon resistor (1 to 3 GΩ) used to stabilized the gate-source
potential accounts for a large portion of the JFET noise component.
Li-ion
Battery
(Pch MOS)
ECH8601
ECH8603
(Pch MOS)
(Pch MOS)
MCH6305/MCH6307
ECH8603
Thinner island frame and improved frame bending process
MCH6305/MCH6307
ECH8603
Result
SSFP
VSFP
VTFP
-106
0.14
1.4✕1.4✕0.6 mm
1.2✕1.4✕0.46 mm
1.2✕1.4✕0.34 mm
2 GΩ
CDMA/TDMA (IS136)
-106.5
0.12
25 GΩ
Smaller
90 GΩ
-107
-107.5
-108
0.10
0.08
0.06
0.04
FFaammee
tthhiicckknneessss
112200 mm
FFaammee
tthhiicckknneessss
7700 mm
Thinner
Ultrathinner
Fame
Fame
thickness
thickness
-108.5
70
m
Inner antenna
Diversity switches
Ext.
-109
0.02
0.00
Filter
Larger
Low-noise amplifier
Frame bend width
Frame bend width
-109.5
0.00
Mixer
130
m
Frame bend width
100
m
0.50
1.00
1.50
2.00
2.50
3.00
3.50 4.00
0
2
4
6
8
10
50
m
(GaAs MMIC)
SPM3212
SPM3215
SPM3220
SPM3226
R
(GΩ)
Potential stabilization time (s)
GS
Filter switches for TDMA
Island frame thickness:
Reduced by 50 m !
Antenna
(GaAs MMIC)
SPM3211
OSC(NPN BiP)
Total reduction: 130 m !
EC3H09B
EC3H07B
SBFP420B
Development
Frame bending process:
Reduced by 80 m !
SPM3212
Local switches
Buffer amplifiers
(NPN BiP)
EC3H10B
FS303
Establishment of and ultrathin wafer process (4 inch)
Improved signal-to-noise ratio due to p-channel MOSFET development
(GaAs MMIC)
SPM3212
SPM3220
SPM3226
Filter switches for TDMA
(GaAs MMIC)
SPM3212
SPM3220
SPM3226
V
DD
Introduction of B/G plus spin etching process!!
Factor workaround
FS304
Input protection
diode
V
protection resistor
V
DD
300‰
Duplexer
GND
V
Antenna switch
DD
1k‰
IN
Target thickness: 80 µm
Spin etching process
thickness: 40 µm
Target thickness: 80 µm
Spin etching process
thickness: 40 µm
Target thickness: 80 µm
Spin etching
B/G
Pch MOSFET
V
IN
Input protection
resistor
B/G process thickness: 350
µm
PA module
L / W = 3 µm / 1 mm
GND
SANYO established an 80 µm ultrathin wafer process
by improving the wafer chamfering shape and introducing spin etching !!!
Filter switches for PCS and TDMA
SPM3212, SPM3220, SPM3226
Effect
Total package height
Noise voltage (dBV) Insertion loss (dBV) Signal-to-noise ratio (dB) Signal-to-noise ratio evaluation
Pch MOSFET
JFET
-113 to -114
-105 to -107
-5.0 to -5.5
-1.5 to -3.5
68 to 68.5
62 to 64
PHS
SSFP
VSFP
VTFP
Low-noise amplifiers
Potential stabilization time
0.5
0.4
0.3
Enhancement mode
P-ch MOSFET
Potential stabilization time
Inner antenna
EC3H07B EC3H10B
SBFP405B SBFP420B
SBFP540B
0.2
0.1
0
Thinner
Ultrathinner
Local switches
Antenna
(NPN BiP)
SPM3212
SPM3220
SPM3226
0
0.5
1
1.5
2
2.5
3
Time (s)
Buffer amplifiers
(NPN BiP)
EC3H07B
FS303
Diversity switch
SANYO achieved extremely thin packages by combining of the above technologies.
The potential stabilization time becomes under 1 second
in enhancement mode p-channel MOSFETs.
Antenna switches
SPM3212
SPM3220
SPM3215
SPM3226
OSC EC3H09B
EC3H07B
SBFP420B
Power amplifier
Baseband logic
Li-ion battery
CPH3106(PNP Bip.),
MCH3106(PNP Bip.)
MCH6305(Pch MOS)
MCH6307(Pch MOS)
CPH3106(PNP Bip.)
MCH3106(PNP Bip.)
MCH6305(Pch MOS)
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36
37
Light, Fast, Saving, and Friendly
As miniaturization and efficiency advance and improve in portable equipment, the needs for further miniaturization and lower
power consumption in discrete devices are increasing even faster.
SANYO responds to these needs by providing an extensive line of products that contribute to reduced mounting areas and
reduced parts counts in application circuits
SANYO's Lineup of High-Reliability
Discrete Devices
Ultralow on-resintance Power MOSFETs for RF and logic block
RDS(on)
VGS=4.5V
Max. (Ω)
RDS(on)
VGS=2.5V
Max. (Ω)
RDS(on)
VGS=1.5V
Max. (Ω)
VDSS
I
D
Size
Ciss
Polarity
Type No.
Package
Microwave Device Series
(V)
(A)
(mm)
typ(pF)
■ High-frequency silicon transistors for VCO
Pch
SCH1302
SCH6
SCH6
1.6 × 1.6
20
*0.165
0.22
0.39
2
410
Pch+Nch
SCH2601(Pch)
(Nch)
1.6 × 1.6
30
30
*1.9
*0.9
2.8
0.4
0.7
40
30
S21e 2
typ.(dB)
fT
Size
(mm)
VCEO
(V)
IC
(mA)
PC
(mW)
NF
typ.(dB)
typ.
Usage
Package
Type No.
Notes
1.15
(GHz)
Pch+Nch
SCH2602(Pch)
(Nch)
SCH6
1.6 × 1.6
12
30
0.31
*3.7
0.47
5.2
0.67
1.5
160
7
Oscillator
EC3H09B
ECSP
ECSP
ECSP
ECSP
6
1.0 × 0.6
1.0 × 0.6
1.0 × 0.6
1.0 × 0.6
11.2
4
1.5
70
80
35
80
70
80
30
40
30
40
30
35
30
70
40
70
100
0.35
EC3H11B
10.5
25
4
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
1.5
1.1
0.9
1.5
1.5
1.5
1.3
1.5
1.3
1.5
1.1
1.5
1.5
1.3
1.5
5
Pch
Nch
3LP03M
3LN03M
MCP
MCP
2.1 × 2.0
30
30
*1.9
*0.9
2.8
250m
350m
40
30
4.5
4.5
4
SPFP420B
SPFP540B
2SC5781
17
2.1 × 2.0
1.15
29
8.5
6
Nch
Pch
MCH3411
MCH6305
MCH6307
CPH6311
ECH8603
MCPH6
MCPH6
MCPH6
CPH6
2.1 × 2.0
2.1 × 2.0
2.1 × 2.0
2.8 × 2.9
2.8 × 2.9
2.8 × 2.9
30
20
12
20
20
12
*90m
65m
46m
42m
54m
40m
118m
98m
66m
60m
87m
65m
3
4
5
5
4
5
270
680
11.2
SSFP
SSFP
1.4 × 0.8
1.4 × 0.8
1.0 × 0.6
2SC5783
10.5
12.5
12.5
10
4
4
4
4
4
4
5
Pch
98m
940
Buffer
EC3H07B
EC3H10B
2SC5646
ECSP
ECSP
SSFP
SSFP
ECSP
10.5
8.5
9.5
8.5
10.5
17
Pch
1230
800
1.0 × 0.6
1.4 × 0.8
1.4 × 0.8
1.2 × 0.8
Pch Dual
Pch Dual
ECH8
ECH8611
ECH8
1230
2SC5782
12.5
12.5
VEC2302
Pch Dual
Pch Dual
VEC8
VEC8
2.8 × 2.9
30
12
168m
49m
3
4
510
940
Oscillator
+ Buffer
FS301 (TR1 Side)
2SC5645
SBFP420
VEC2303
2.8 × 2.9
75m
107m
(TR2 Side)
25
4.5
4
*VGS=4V, VGS=1.8V
FS303 (TR1 Side)
ECSP
ECSP
1.2 × 0.8
12.5
11.2
12.5
2SC5645
2SC5781
2SC5782
2SC5781
10.5
8.5
10.5
8.5
(TR2 Side)
FS304 (TR1 Side)
(TR2 Side)
4
Low saturation voltage transistors for logic block
4
1.2 × 0.8
Size
(mm)
VCEO
(V)
IC
(A)
PC
(W)
hFE
Min. to Max.
VCE (sat)
Max. (mV)
Type No.
Package
Porality
11.2
4
300
15C01S
SMCP
SMCP
SCH6
SCH6
1.6 × 1.6
1.6 × 1.6
1.6 × 1.6
1.6 × 1.6
15
15
12
15
0.6
0.8
0.8
0.8
0.2
NPN
NPN
300 to 800
300 to 800
300 to 800
300 to 800
■ GaAs MMIC products for Antenna switches, local switches and other switches
280
240
280
30C02S
0.2
0.4
0.4
SCH2101
SCH2201
PNP
Control
Size
(mm)
Isolation
typ.(dB)
Insertion Loss
typ.(dB)
Pin1dB
typ.(dBm)
Voltage
(V)
Usage
Type No.
Package
Notes
NPN+NPN
0.4 to 2.5 GHz Use
Switch SPM3220
ECSP
ECSP
1.2 × 0.8
1.2 × 0.8
1.2 × 0.8
2.1 × 2.0
3
**16
**18
**18
**16
**16
**13
13
**0.5
**0.35
**0.35
**0.55
**0.55
**1.1
1.0
26
22(2.8V)
22(2.8V)
28
0.4
0.4
30
30
0.6
0.6
SCH2503(PNP)
(NPN)
220
190
200 to 500
300 to 800
PNP+NPN
PNP
SCH6
1.6 × 1.6
SPM3226
SPM3227
SPM3211
SPM3212
2.4 to
2.4 to
3
5
5
0.4 to 2.5 GHz Use
0.4 to 2.5 GHz Use
0.4 to 2.5 GHz Use
165
MCH3106
MCPH3
12
3
0.8
2.1 × 2.0
2.1 × 2.0
2.8 × 2.9
2.8 × 2.9
200 to 560
ECSP
150
230
180
MCH3206
CPH3109
CPH3209
MCPH3
CPH3
15
30
30
3
3
3
0.8
0.9
0.9
NPN
PNP
NPN
200 to 560
200 to 560
200 to 560
MCPH6
3
0.4 to 2.5 GHz Use
0.4 to 2.5 GHz Use
Up to 6 GHz Use
MCPH6
MCPH6
2.1 × 2.0
2.1 × 2.0
2.1 × 2.0
28
CPH3
SPM3215
SPM3501
3
3
26
MCPH6
20
Schottky Barrier Diodes for logic block
SPM3211: Reverse control IC of SPM3212
SPM3215: Single control IC
SPM3226: Reverse control IC of SPM3227
** Measured frequency: 2.5 GHz Measured frequency: 1 to 2.5 GHz
Measured frequency: 5.8 GHz Measured frequency: 5 to 6 GHz
Size
(mm)
VRRM
(V)
IO
(A)
IFSM
(A)
VF
max. (V)
IR
Type No.
Package
Notes
max. (µA)
0.45
360
SS1003EJ
ECSP
ECSP
1.6 × 0.8
1.6 × 0.8
1.6 × 1.6
2.1 × 2.0
30
30
30
30
1
5
5
Power MOSFETs+ Schottky Barrier Diodes for logic block
0.55
0.47
0.45
0.55
0.4
15
SB1003EJ
S0503SH
SS1003M
SB1003M
1
0.5
1
RDS(on)
IR
max. (
IO
(A)
Size
(mm)
VDSS
(V)
ID
(A)
PD
(W)
VRRM
(V)
VF
max. (V)
VGS=2.5V
Package
Type No.
120
µA)
SCH6
5
max. (Ω)
15
15
MCPH6
5
200
200
500
500
MCH5801
MCPH5
MCPH5
CPH5
2.1 × 2.0
2.1 × 2.0
2.8 × 2.9
2.8 × 2.9
1.5
1.5
2
0.8
0.8
0.9
0.9
280m
450m
200m
82m
15
15
15
15
0.5
0.5
1
20
12
0.45
0.45
0.4
1
5
MCPH6
MCPH3
2.1 × 2.0
2.1 × 2.0
2.1 × 2.0
30
15
MCH5815
CPH5802
CPH5811
500
90
SBS004M
SBS808M
1
1
10
10
20
20
0.43
MCPH5
15
Parallel type
CPH5
3
1
0.4
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