This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2009G
Silicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
■ Features
• High collector-emitter voltage (Base open) VCEO
• Low noise voltage NV
■ Package
• Code
SMini3-F2
• Marking Symbol: AR
• Pin Name
1. Base
S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing.
•
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
−120
−120
−5
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
V
V
−20
mA
mA
mW
°C
Peak collector current
ICP
−50
Collector power dissipation
Junction temperature
PC
150
Tj
150
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−120
−120
−5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VCE = −5 V, IC = −2 mA
V
V
−100
−1
nA
µA
ICEO
hFE
180
700
VCE(sat) IC = −20 mA, IB = −2 mA
− 0.6
V
fT
VCB = −5 V, IE = 2 mA, f = 200 MHz
200
130
MHz
mV
Noise voltage
NV
VCE = −40 V, IC = −1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
T
hFE
180 to 360
260 to 520
360 to 700
Publication date: April 2007
SJC00349AED
1
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This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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